Cr – Foil and Substrate

Cr – Foil and Substrate

PAM XIAMEN offers Cr – Foil and Substrate.

Cr Metallic Substrate ( polycrystalline): 10×10 x 1.0 mm, 1 side polished-1

Polycrystal Cr  ( Chromium ) metallic substrate 
Purity:   > 99.99%
Substrate dimension:     10×10 x 1.0 mm, 
Surface finish:   one side polished

Colbat Properties

Name:                    Chromium
Atomic Number:     24
Atomic Mass:        58.9332 amu 
Density:               7.19 g/cm3
Melting Point:       2180 K ​(1907 °C, ​3465 °F)
Boiling Point:        2944 K ​(2671 °C, ​4840 °F)

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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