Silicon Ingots-3

PAM XIAMEN offers Silicon Ingots.

Material Description
FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm
FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs
FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs
FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,200μs, Ground, (6 ingots: 294mm, 296mm, 296mm, 294mm, 219mm, 112mm)
FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >50,000 Ohmcm, MCC Lifetime>1,150μs, Ground
FZ 4″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >22,000 Ohmcm, MCC Lifetime>1150μs, Ground, (1 ingot: 260mm) SEMI,
FZ 3″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 {1.29-1.32} Ohmcm, MCC Lifetime>1777μs, (2 ingots: 21mm, 54mm)
FZ 3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1,000-2,000 Ohmcm, Ground
FZ Ingot 3″Ø×(112+265)mm, p-type Si:B[111] ±2°, (1,800-3,000)Ohmcm, Lifetime>1,000μs, SEMI
FZ 3″Ø×102mm ingot p-type Si:B[111] ±2°, (4,400-4,600)Ohmcm, Ground, SEMI
FZ 3″Ø×(117+135)mm ground ingot, n-type Si:P[100] ±2°, Ro>5,000 Ohmcm, MCC Lifetime>1,000µs
FZ 3″Ø×(129+131+147)mm ground ingot, n-type Si:P[100] ±2°, (40-60)Ohmcm,
FZ 3″Øx90mm ground ingot, n-type Si:P[111], (2,000-6,000)Ohmcm, MCC Lifetime>2,000μs, Ox<1E16/cc, C<1E16/cc, RRV<35%
FZ 3″Ø ingot n-type Si:P[111] ±2.0°, Ro: 5,750-6,850 Ohmcm, MCC Lifetime>6,000μs, As-Grown, (2 ingots: 250mm, 239mm)
FZ 3″Ø×188mm ground ingot, n-type Si:P[111] ±0.5°, Ro:>2,000 {2.330-3,300}Ohmcm, MCC Lifetime>1,640µs
FZ 3″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground
FZ 3″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >17,500 Ohmcm
FZ 3″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >20,000 Ohmcm, (2 ingots: 119mm, 121mm)
FZ 2″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 {1.29-1.32} Ohmcm, MCC Lifetime>1777μs, (2 ingots: 58mm, 84mm)
FZ 2″Ø×(132+124+124+123+115+107+100+99)mm ingots, p-type Si:B[100] ±2°, (1,000-3,000)Ohmcm
FZ 2″Ø×64.5mm ingot p-type Si:B[100]±2º, (2,879-3,258)Ohmcm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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