Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17meta-author
PAM-XIAMEN, a leading SiC epitaxial wafer manufacturer, can offer 4H SiC epitaxial wafers for MOS fabrication, which refer to a single crystal film(epitaxial layer) with certain requirements and the same crystal growing on a silicon carbide substrate. The SiC epitaxial wafer market size is [...]
2021-05-17meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[111-4°] ±0.5°
4″
325
P/E
0.001-0.005
SEMI Prime, Back Surface: Sand blasted with LTO seal
n-type Si:As
[111-4°] ±0.5°
4″
300
P/E
0.001-0.005
SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
n-type Si:As
[111-2°] ±0.5°
4″
400
P/EOx
0.001-0.004 {0.0018-0.0036}
SEMI Prime, Epi edges, 0.5μm LTO
n-type Si:As
[111-4°] ±0.5°
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111] ±0.5°
4″
1000
P/E
0.001-0.005 {0.0031-0.0040}
SEMI Prime, TTV<4μm, [...]
2019-03-05meta-author
From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. [...]
Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd
Powerway wafer develops and manufactures wafers with Gallium Arsenide (GaAs), Gallium Nitride (GaN) technologies advanced high-performance RF solutions for customers worldwide. We are a leading semiconductor wafer in market serving customers in mobile devices,3G and 4G base station,WLAN,WiMAX,GPS,defense and aerospace markets. We have GaAs [...]
2012-06-20meta-author
Issues for the larger diameter epitaxial wafer
In order to establish the epitaxial wafer as the main substrate for semiconductor devices produced on large diameter wafers over 300 mm, the epitaxial wafer must satisfy stringent requirements in terms of both quality and costs. Before proceeding [...]