Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100-6°] 4″ 525 P/E 1-100 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.08-0.12 SEMI Prime, TTV<5μm p-type Si:B [100-4°] ±0.5° 4″ 381 P/E 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 800 P/EP 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 3100 P/P CZ 0.006-0.009 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 525 P/E 0.0042-0.0047 SEMI Prime p-type Si:B [100] 4″ 150 ±15 P/P 0.001-0.005 SEMI Prime, TTV<2μm p-type Si:B [111-3°] 4″ 300 P/E 3-4 SEMI Prime p-type Si:B [111-3°] 4″ 400 P/E 0.015-0.018 SEMI Prime p-type Si:B [111] 4″ 525 P/E 0.005-0.006 SEMI Prime p-type Si:B [111-1.5°] 4″ 525 P/E 0.002-0.004 SEMI Prime p-type Si:B [111] 4″ 300 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° [...]
PAM XIAMEN offers 4″FZ Prime Silicon Wafer-9 4″ Silicon Wafer Orientation (100) Thickness 525±25μm SSP P type, Boron doped Resistivity>200Ωcm Roughness<8 Angstrom For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN is able to supply epitaxial thin film of P-type GaN on GaN substrate. P-type GaN thin film epitaxial on GaN substrate is the main technique for developing emitting device. Mg is the most common p-type dopant in III-nitride material systems, partly due to the [...]
PAM XIAMEN offers 8″Silicon As-cut Wafer According to the production process, silicon wafers can be divided into as-cut wafer, lapped wafer, etched wafer and polished wafer.The first process of silicon wafer processing is orientation, roll grinding and square cutting. Silicon single crystal directional cutting can [...]
PAM-XIAMEN offers 950nm InGaAs quantum well laser diode wafers. In the application of optoelectronic devices, the InGaAs / GaAs strained quantum well (QW) structure is one of the research hotspots, and the emission band of the InGaAs / GaAs strained quantum well covers the [...]
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(10-11)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
