PAM XIAMEN offers 4″CZ Prime Silicon wafer-14
Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at [email protected] and [email protected]
Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at [email protected] and [email protected]
Chrome photomask is available for transferring high-precision circuit design. The photomask is the pattern film in the chip manufacturing process, and is one of the determined factors for chip accuracy and quality. More specifications please see as follows: No.1 5 inch Chrome Mask Plate (PAM180119-MASKW) Material Soda [...]
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1 6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm PARAMETER SPECIFICATION GENERAL CHARACTERISTICS 1 Growth Method FZ Gas Dope 2 Crystal Orientation (100) 3 Conductivity Type n 4 Dopant Phosphorus 5 Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS 6 Resistivity 2000 – 7000 Ωcm 7 Life Time >1500 µsec CHEMICAL CHARACTERISTICS 8 Oxygen Concentrations < 2xE16 at/cm3 9 Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS 10 Front Surface Condition Polished, [...]
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping 4″ CZ crystal Si wafer N type doped P Orientation<111> Resistivity 12-15Ωcm Thickness 205-220μm Prime Flat32.5±2.5mm no need for DSP, just double side lapping For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
Atomic Layer Deposition (ALD), also known as atomic layer epitaxy (ALE), is an atomic-scale thin film preparation technology. It can deposit ultra-thin films with uniform thickness, controllable thickness and adjustable composition. With the development of nanotechnology and semiconductor microelectronics, the size requirements of devices [...]
PAM-XIAMEN is an expert of LED wafers, and we offer LED wafers (link: https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html) and technology support for you on LED fabrication by our rich experience. Here we share a method of laser for scribing LED wafers. Laser processing is to irradiate a laser [...]