Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers TGG (Terbium Gallium Garnet). TGG singlecrystal（ Terbium Gallium Garne ） is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm. TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
Highlights •Effects of atomic step width on the removal of sapphire and SiC wafers are studied. •The reason of effects of step width on the removal and the model are discussed. •CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed. •The variations of atomic [...]
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline). General Properties for Titanium Symbol Ti Atomic Number 22 Atomic Weight: 47.867 Crystal structure: HCP Lattice constant at room temperature a: 0.295 nm Lattice constant at room temperature b: 0.468 nm Density: 4.506 g/cm3 Melting Point: 1668°C [...]
PAM XIAMEN offers 6″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 6″ {150.0±0.3mm}Ø×625±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send [...]
A Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers A Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN A-SI Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 10 6Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
Yellow and Green Luminescence in a Freestanding GaN Template We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV [...]
