4″CZ Prime Silicon wafer-14

PAM XIAMEN offers 4″CZ Prime Silicon wafer-14

Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100

For more information, send us email at [email protected] and [email protected]

2020-06-12

Freestanding GaN Substrate

Product Specifications PAM XIAMEN offers Freestanding GaN Substrate 2″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 2″(50.8)+/-1mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 16+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 8+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation Density <5×10^6cm-2 Marco Defect Density A grade<=2cm-2 B grade>2cm-2 TTV <=15um BOW <=20um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded ≥ 90 % Usable Area 1.5″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 1.5″(38.1)+/-0.5mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 12+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 6+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation [...]

2019-03-15meta-author

PbSe single crystal substrate

PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]

2019-05-14meta-author

4″ Prime Silicon Wafer

PAM XIAMEN offers 4″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×300±25µm, p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm, TTV<10µm, Bow<40µm, Warp<40µm, Both-sides-polished, SEMI Flats (two), Sealed in Empak cassette. Primary Flat: 32.5±-2.5, 110±1°。 Secondary Flat: 18±2，90°±5° For more information, please visit our website: https://www.powerwaywafer.com, send [...]

2019-07-02meta-author

FZ Silicon Ignot Diameter 60+1mm-1

PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: [...]

2019-07-03meta-author

3″ FZ Silicon Wafer Thickness：229-249μm -1

PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness：229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 39-47Ωcm TTV ≤10μm RRG ≤ 7% about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to be [...]

2019-08-22meta-author

WSTS recalculates forecast for the worldwide semiconductor market

Worldwide semiconductor market is expected to be slightly positive in 2016 and grow moderately in 2017. WSTS has re-calculated the Autumn 2015 forecast using the actual figures of the fourth quarter 2015. During 2016 growth is expected to be driven by sensors, micros, and [...]

2016-03-23meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

4″CZ Prime Silicon wafer-14

4″CZ Prime Silicon wafer-14

PAM XIAMEN offers 4″CZ Prime Silicon wafer-14

Share this post

Related Posts

Freestanding GaN Substrate

PbSe single crystal substrate

4″ Prime Silicon Wafer

FZ Silicon Ignot Diameter 60+1mm-1

3″ FZ Silicon Wafer Thickness：229-249μm -1

WSTS recalculates forecast for the worldwide semiconductor market

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers