PAM XIAMEN offers 4″CZ Prime Silicon wafer-14
Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers SiC Wafer (4H & 6H) & SiC Film(3C). The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. SiC (4H) SiC – 4H (0001), 10x10x0.3 mm [...]
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]
PECVD Nitride PAM XIAMEN offers PECVD Nitride PECVD nitride is an alternative to LPCVD nitride when lower temperature ranges are required. Micro-mechanicalWidely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer or [...]
AlGaP/GaAs Epi Wafer for Solar Cell Thanks to GaAs tunnel junction technology, we offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers (AlGaAs,InGaP) grown on GaAs for solar cell application.And now we offer a epi wafer structure with InGaP [...]
150mm 4H n-type SiC EPI wafers 150mm 4H n-type SiC EPI wafers are available, now please see below item example: ITEM: PAM-191014-SIC-EPI SiC wafers (research/production grade) Substrate Thickness (Average) [μm] 350±25 Diameter [mm] 150 ± 0.25 Flat length [mm] 47.5 ± 2.0 Poly-type/Conductivity 4H/n.type Front Surface Finish CMP Epi-face/Orientation Si/(0001) 4± 0.5° off Substrate Resistivity [Ω.cm] ≤ 0.025 Micropipe Density (MPD) [...]
GaInP/InP epi wafer We can offer 2″ GaInP/InP epi wafer as follows: 2” GaInP epi layer: thickness:1um, Ga:In=1:1, epi layer:1-3um, InP substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished. Gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is [...]
