4″CZ Prime Silicon wafer-14

PAM XIAMEN offers 4″CZ Prime Silicon wafer-14

Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100

For more information, send us email at [email protected] and [email protected]

2020-06-12

Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates

The Silicon on Lattice Engineered Substrate (SOLES) platform enables monolithic integration of III-V compound semiconductor (III-V) and silicon (Si) complementary metal oxide semiconductor (CMOS) devices. The SOLES wafer provides a device quality Si-on-Insulator (SOI) layer for CMOS device fabrication and an embedded III-V device [...]

2020-01-13meta-author

Ge single crystal(Prime grade)-7

PAM XIAMEN offers 3″ Diameter Wafer. 3″ Diameter Wafer Ge Wafer Undoped (100) 3″ dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (100) 3″ dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (110) 3″ [...]

2019-04-25meta-author

Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy

Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the [...]

2018-09-20meta-author

Terahertz Chip

PAM-XIAMEN can provide a series products of terahertz chip: Power Amplifier (PA) Chip, Low Noise Amplifier (LNA) Chip, PIN/FET Switch, Zero Bias Detector Chip, Amplification Frequency Multiplication Chain (AMC) Chip, MIXER Chip, Schottky Frequency Multiplication MMIC, Schottky Mixing MMIC, and Attenuator Chip. The terahertz chip is a brand-new microchip, a [...]

2021-07-16meta-author

NB:SRTIO3 NIOBIUM DOPED STRONTIUM TITANATE CRYSTAL AND SUBSTRATES

PAM XIAMEN offers Nb:SrTiO3 Niobium doped Strontium Titanate Crystal and Substrates. Nb: SrTiO3, Niobium doped Strontium Titanate Crystal and Substrates Main Parameters Nb:SrTiO3 A B C D Nb Concentration (wt%) Customized 0.7 0.5 0.05 Resistivity ohm-cm Customized 0.007 0.05 0.08 Migration rates cm2/vs Customized 8.5 8.5 6.5 Characteristics Nb: SrTiO3 and SrTiO3 have a similar structure, but Nb: STO has an high electrical conductivity. Typical STO are insulators Size 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm Ф15, Ф20, Ф [...]

2019-03-14meta-author

6″ FZ Silicon Wafer-6

PAM XIAMEN offers 6″ FZ Silicon Wafer-6 N Type/Phosphorus doped Orientation (111) Thickness 400±10μm Resistivity 2000-5000Ωcm Flat one 47.5 ± 2.5, <110> ±1° TTV≤15μm Bow/Warp ≤20μm FLATNESS(FPD)≤5μm Front Side: Chemical Mechanical Polished Back side: Damaged, with SiO2/Al2O3 Particle ≤10 @≥0.3㎛ For more information, send us email at [email protected] and [email protected]

2021-03-18meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

4″CZ Prime Silicon wafer-14

4″CZ Prime Silicon wafer-14

PAM XIAMEN offers 4″CZ Prime Silicon wafer-14

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Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates

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