Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers4″ Silicon EPI Wafer-6 4″ Si epi wafer Structure： (Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate) Top layer intrinsic Si: Resistivity≥50Ωcm, Thickness 5μm, Residual carrier concentration<1×1014/cm3 Middle layer Phosphorus Doped： Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3), Thickness 20μm, Residual carrier concentration<2.1×1013/cm3 Layer with Ion Implantation: handled [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [112-5° towards[11-1]] ±0.5° 4″ 765 P/P FZ ~100 SEMI Prime, TTV<3μm n-type Si:P [112-5° towards[11-1]] ±0.5° 4″ 795 E/E FZ >100 SEMI, in Empak, TTV<4μm, Lifetime>2,000μs Intrinsic Si:- [110] 4″ 500 P/P FZ >20,000 SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary Intrinsic Si:- [110] ±0.5° 4″ 500 P/E FZ >15,000 Prime Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, TTV<1μm Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, TTV<2μm, Groups of 5 wafers Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 4″ 350 P/P FZ >20,000 Prime, TTV<5μm Intrinsic Si:- [100] 4″ 350 P/P FZ >20,000 Prime, [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 525+/-25um. Si, 150mm dia. SSP 525+/-25 thick N type Phos or antimony resistivity 0.01-0.2 ohm-cm. with 200A thermal OX and 1200A LPCVD nitride – stoichiometric For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers 6″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 6″ {150.0±0.3mm}Ø×625±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send [...]
CZT α-ray Probe PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment. PAM-01A1 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into [...]
PAM XIAMEN offers GaN on Si for Power, D-mode. 1.1 D-MODE GaN HEMT Structure on Silicon Wafer size 2″, 4″, 6″,8″ AlGaN/GaN HEMT structure Refer 1.2 Carrier density >9E12 cm2 Hall mobility / Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=30um Edge exclusion <5mm SiN passivation layer 0~5nm u-GaN cap layer 2nm Al composition 20-30% AlGaN barrier layer / GaN channel / AlGaN buffer / AlN / Substrate material Silicon substrate Si wafer thickness (μm) 675um(2″), 1000um(4″), [...]
