Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 5000 P/E 3.4-3.7 SEMI Prime, Individual cst n-type Si:P [100] 2″ 40 ±10 P/P 1-3 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers n-type Si:P [100] 2″ 1000 P/P 1-10 SEMI Prime n-type Si:Sb [100] 2″ 280 P/E 0.01-0.02 SEMI Prime n-type Si:Sb [100] 2″ 1000 P/E 0.005-0.020 SEMI Prime n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 500 P/E 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 7000 P/E 0.001-0.005 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual [...]
PAM XIAMEN offers Moissanite Raw Crystal Silicon Carbide. High quality colorless raw Moissanite crystals (D-E-F color) from PAM XIAMEN are grown using advanced technologies. Gem grade Moissanite silicon carbide crystals are available in different sizes ranging from tens of grams to kilograms. What is Moissanite? In 1893, [...]
Silicon dioxide wafer can be offered by PAM-XIAMEN, which is single / double side polished and one-sided / double-sided oxidation in various sizes. In the integrated circuit process, oxidation is an indispensable process technology. Since early people discovered that the diffusion rate of impurity [...]
Layer structure of 703nm Laser We can offer Layer structure of 703nm Laser as follows: Layer Composition Thickness (um) Doping(cm-3) Cap P+- GaAs 0.2 Zn:>1e19 Cladding p – Al0.8Ga0.2As 1 Zn:1e18 Etch stop GaInP 0.008 Zn:1e18 Top barrier Al0.45Ga0.55As 0.09 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Bottom barrier Al0.45Ga0.55As 0.09 Undoped Cladding n – Al0.8Ga0.2As 1.4 Si:1e18 Buffer n – GaAs 0.5 Si:1e18 Substrate n+ – GaAs S :>1e18 Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [100-4.0°] ±0.5° 2″ 400 P/E FZ >20,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 2″ 400 P/E FZ >20,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 2″ 200 P/P FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 350 P/P FZ >10,000 SEMI Test, Wafers with edge chips Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000-10,000 SEMI Prime Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000-10,000 SEMI Prime, in hard cassettes of 2 & 5 wafers Intrinsic Si:- [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI Intrinsic Si:- [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI Intrinsic Si:- [111] [...]
Annealed silicon wafer can be provided with low defect density from PAM-XIAMEN. The purpose of using annealed wafer is to eliminate defects on the silicon wafer surface and the component manufacturing area of the surface layer, and has a strong ability to capture heavy [...]
