PAM XIAMEN offers MoTe2 crystal.
MoTe2 (Molybdenum Ditelluride) can crystallise in two dimensional sheets which can be thinned down to monolayers that are flexible and almost transparent. It is a semiconductor, and can fluoresce. It is part of a class of materials called transition [...]
2019-05-13meta-author
150mm 4H n-type SiC epi wafer with excellent uniformity and extremely low defect density is available. SiC epitaxial wafer refers to a silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on a silicon [...]
2020-03-10meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm
FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm
FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm
6″Ø ingot p-type Si:B[100], Ro: 1-10 Ohmcm, (1 ingot: 21mm)
6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 188mm)
6″Ø ingot p-type Si:B[100], [...]
2019-03-08meta-author
PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution.
CZT Asymmetry Detector
1. CZT High Energy Resolution Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
5.0×5.0mm2
10.0×10.0mm2
Thickness
2.50mm
5.0mm
Electrode material
Au
Operation temperature
0℃-+40℃ (standard)/ -20℃-+40℃ (customized)
Operation voltage
≤900V
Energy range
10KeV~2.6MeV
Energy resolution(22℃)
<2.5%@662MeV
Peak-compton ratio
>3
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Remarks
Customized [...]
2019-04-24meta-author
PAM XIAMEN offers 5″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
5″
635 ±15
E/E
FZ >5,000
p-type Si:B
[100]
5″
889 ±13
P/E
FZ >1,000
Prime
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
Warp measured <8μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers
n-type Si:P
[111] ±0.1°
5″
200 ±15
BROKEN
FZ >3,000
Broken L/L wafers, in 2 pieces
n-type Si:P
[111]
5″
300 ±15
P/E
FZ 1,000-3,000
SEMI Prime, in [...]
2019-03-05meta-author