150mm 4H n-type SiC EPI wafers
150mm 4H n-type SiC EPI wafers are available, now please see below item example:
ITEM: PAM-191014-SIC-EPI
| SiC wafers (research/production grade) | |
| Substrate Thickness (Average) [μm] | 350±25 |
| Diameter [mm] | 150 ± 0.25 |
| Flat length [mm] | 47.5 ± 2.0 |
| Poly-type/Conductivity | 4H/n.type |
| Front Surface Finish | CMP |
| Epi-face/Orientation | Si/(0001) 4± 0.5° off |
| Substrate Resistivity [Ω.cm] | ≤ 0.025 |
| Micropipe Density (MPD) [cm-2] | ≤ 1.00 |
| Basal plane defect (BPD) [cm-2] | ≤ TBC |
| Total Stacking Fault (TSD) [cm-2] | ≤ TBC |
| 1st EPI Thickness [μm] | 1 |
| 1st EPI Carrier Conc. [E18 cm-3] | 1 |
| 2nd EPI Thickness 9 point Average [μm] | 5~10.00 ± 10% |
| 2nd EPI Carrier Conc. 9 point Average [E16 cm-3] | 1.000 ± 0.20 |
| TTV [GBIR] [μm] | ≤ 15.00 |
| WARP (3p) [μm] | ≤ 60.00 |
| BOW (3p) [μm] | ± 40.00 |
| Edge exclusion | 1mm |
| EPI surface defect (PDD) [cm-2] | ≤ 2.00 |
| EPI surface roughness [nm] | ≤ 2.00 |
| Edge chips by diffuse lighting (max) | None |
| Cracks by high intensity light | None |
| Visual carbon Inclusions cumulative area | ≤ 0.05% |
| Scratches by high intensity light | None |
| Contamination by high intensity light | None |
ITEM: PAM-190919-SIC-EPI
| SiC wafers (research/production grade) | |
| Substrate Thickness (Average) [μm] | 150 ± 0.25 |
| Diameter [mm] | 350±25 |
| Flat length [mm] | 47.5 ± 2.0 |
| Poly-type/Conductivity | 4H/n.type |
| Front Surface Finish | CMP |
| Epi-face/Orientation | 4 degree off-axis |
| Substrate Resistivity [Ω.cm] | 0.015-0.028 |
| Micropipe Density (MPD) [cm-2] | <0.5 |
| Basal plane defect (BPD) [cm-2] | ≤ TBC |
| Total Stacking Fault (TSD) [cm-2] | ≤ TBC |
| 1st EPI Thickness [μm] | 0.5 |
| 1st EPI Carrier Conc. [E18 cm-3] | 1.00E+18 |
| 2nd EPI Thickness 9 point Average [μm] | 14 |
| Thickness Uniformity(%) | <3% |
| 2nd EPI Carrier Conc. 9 point Average [E15 cm-3] | 5.50E+15 |
| Thickness Uniformity(%) | <5% |
| TTV [GBIR] [μm] | – |
| WARP (3p) [μm] | ≤ 35 |
| BOW (3p) [μm] | – |
| Edge exclusion | 1mm |
| EPI surface defect (PDD) [cm-2] | – |
| EPI surface roughness [nm] | ≤ 2.00 |
| Edge chips by diffuse lighting (max) | None |
| Cracks by high intensity light | None |
| Visual carbon Inclusions cumulative area | – |
| Scratches by high intensity light | None |
| Contamination by high intensity light | None |
For more information about SiC Epilayer on SiC substrates, please send us email at victorchan@powerwaywafer.com