150mm 4H n-type SiC EPI wafers

150mm 4H n-type SiC EPI wafers

150mm 4H n-type SiC EPI wafers are available, now please see below item example:

ITEM: PAM-191014-SIC-EPI

SiC wafers (research/production grade)  
Substrate Thickness (Average) [μm] 350±25
Diameter [mm] 150 ± 0.25
Flat length [mm] 47.5 ± 2.0
Poly-type/Conductivity 4H/n.type
Front Surface Finish CMP
Epi-face/Orientation Si/(0001) 4± 0.5° off
Substrate Resistivity [Ω.cm] ≤ 0.025
Micropipe Density (MPD) [cm-2] ≤ 1.00
Basal plane defect (BPD) [cm-2] ≤ TBC
Total Stacking Fault (TSD) [cm-2] ≤ TBC
1st EPI Thickness [μm] 1
1st EPI Carrier Conc. [E18 cm-3] 1
2nd EPI Thickness 9 point Average [μm] 5~10.00 ± 10%
2nd EPI Carrier Conc. 9 point Average [E16 cm-3] 1.000 ± 0.20
TTV [GBIR] [μm] ≤ 15.00
WARP (3p) [μm] ≤ 60.00
BOW (3p) [μm] ± 40.00
Edge exclusion 1mm
EPI surface defect (PDD) [cm-2] ≤ 2.00
EPI surface roughness [nm] ≤ 2.00
Edge chips by diffuse lighting (max) None
Cracks by high intensity light None
Visual carbon Inclusions cumulative area ≤ 0.05%
Scratches by high intensity light None
Contamination by high intensity light None

 

ITEM: PAM-190919-SIC-EPI

SiC wafers (research/production grade)
Substrate Thickness (Average) [μm] 150 ± 0.25
Diameter [mm] 350±25
Flat length [mm] 47.5 ± 2.0
Poly-type/Conductivity 4H/n.type
Front Surface Finish CMP
Epi-face/Orientation 4 degree off-axis
Substrate Resistivity [Ω.cm] 0.015-0.028
Micropipe Density (MPD) [cm-2] <0.5
Basal plane defect (BPD) [cm-2] ≤ TBC
Total Stacking Fault (TSD) [cm-2] ≤ TBC
1st EPI Thickness [μm] 0.5
1st EPI Carrier Conc. [E18 cm-3] 1.00E+18
2nd EPI Thickness 9 point Average [μm] 14
Thickness Uniformity(%) <3%
2nd EPI Carrier Conc. 9 point Average [E15 cm-3] 5.50E+15
Thickness Uniformity(%) <5%
TTV [GBIR] [μm]
WARP (3p) [μm] ≤ 35
BOW (3p) [μm]
Edge exclusion 1mm
EPI surface defect (PDD) [cm-2]
EPI surface roughness [nm] ≤ 2.00
Edge chips by diffuse lighting (max) None
Cracks by high intensity light None
Visual carbon Inclusions cumulative area
Scratches by high intensity light None
Contamination by high intensity light None

 

For more information about SiC Epilayer on SiC substrates, please send us email at  victorchan@powerwaywafer.com

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