How is silicon carbide (SiC) chip made? Generally speaking, chips are semi-finished products that have been cut from wafers. PAM-XIAMEN can offer SiC wafers for making chips, more specifications please refer to https://www.powerwaywafer.com/sic-wafer. Each wafer integrates hundreds of chips, and each chip consists of thousands of cells. So, how to make a cell?

First step: Injection mask. The wafer is cleaned at first, a layer of silicon oxide film is deposited, and then a photoresist pattern is formed through uniform glue, exposure, development. Finally the pattern is transferred to the etching mask through an etching process.

Second step: Ion implantation. Put the masked wafer into an ion implanter and implant high-energy ions. Then, the mask is removed and annealed to activate the implanted ions.

Third step: Making the grid. A gate oxide layer and a gate electrode layer are sequentially deposited on the wafer to form a gate-level control structure.

Fourth step: Making a passivation layer. A dielectric layer with good insulating properties is deposited to prevent breakdown between electrodes.

Fifth step: Making drain-source electrodes. Holes are opened on the passivation layer, and metal is sputtered to form drain-source electrodes.

When a positive voltage is applied between the drain-source electrode and the gate-source electrode, the channel opens, electrons flow from the source to the drain, and a current flows from the drain to the source.

A basic power device (a cell) has been fabricated.

SiC chips can effectively improve work efficiency, reduce energy loss, reduce carbon emissions, improve system reliability, reduce volume and save space.

Please click the link to watch the short video of making SiC chip: https://youtu.be/8EyJApHZBJ8

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.