PAM XIAMEN offers (112) Orientation Silicon Wafers.
If you don’t see what you need then please email us your specs.
Item
Type/Dopant
Ori
Dia (mm)
Thck (μm)
Surf.
Resistivity Ωcm
Comment
PAM3026
n-type Si:P
[112-5.0° towards[11-1]] ±0.5°
6″
875 ±10
E/E
FZ >3,000
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
PAM3027
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
1,000 ±10
C/C
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
2019-02-22meta-author
25.4 (1 inch) Silicon Wafers
PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.
Item
Dia
Thickness (um)
Orientation
Type
Dopant
Resistivity
(Ohm-cm)
Polish
Remark
PAM1901
25.4mm
20000um
<111>
P
B
>1000
DSP
FZ
PAM1902
25.4mm
400um
<100>
P
B
ANY
SSP
Thickness is: 400+/-100um.
PAM1903
25.4mm
500um
<100>
ANY
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM1904
25.4mm
280um
<111>
Undoped
Undoped
>2000
SSP
Intrinsic FZ
PAM1905
25.4mm
73.5um
<100>
Undoped
Undoped
>5000
DSP
FZ, Float Zone
PAM1906
25.4mm
500um
<100>
P
B
.01-.05
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1907
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, [...]
2019-02-15meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
500
P/P
1-100
SEMI Prime, TTV<1μm, With Lasermark
n-type Si:P
[100-4°]
4″
525
P/E/P
1-10
SEMI Prime
n-type Si:P
[100]
4″
600
P/P
1-100
SEMI Prime, TTV<2μm, Bow<20μm, Warp<30μm
n-type Si:P
[100]
4″
1000
P/P
1-20
SEMI Prime
n-type Si:P
[100]
4″
2500
P/P
1-100
SEMI Prime, Individual cst
n-type Si:Sb
[100]
4″
450
P/E
~0.03
SEMI Prime
n-type Si:Sb
[100]
4″
400
P/E
~0.02
SEMI Prime
n-type Si:Sb
[100] ±0.2°
4″
250
P/P
0.01-0.05
SEMI Prime
n-type Si:Sb
[100]
4″
310 ±15
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
600
P/E
0.01-0.03
Strange Flats
n-type Si:Sb
[100-4°]
4″
1500
P/E/P
0.005-0.030
SEMI Prime
n-type Si:Sb
[100]
4″
1500
P/E/P
0.001-0.030
SEMI Prime
n-type Si:P
[111]
4″
1500
P/E
>20
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI [...]
2019-03-06meta-author
PAM XIAMEN offers Cr – Foil and Substrate.
Cr Metallic Substrate ( polycrystalline): 10×10 x 1.0 mm, 1 side polished-1
Polycrystal Cr ( Chromium ) metallic substrate
Purity: > 99.99%
Substrate dimension: 10×10 x 1.0 mm,
Surface finish: one side polished
Colbat Properties
Name: [...]
2019-05-08meta-author
PAM XIAMEN offers 1654nm laser diode wafers.
Available Center Wavelengths: 1640nm – 1670nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 8mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 10 pm/mA
Slope Efficiency (typical): 0.10 mW/mA
For more [...]
2019-03-13meta-author
PAM XIAMEN offers GaN on Si for Power, E-mode.
1.1 E-MODE GaN HEMT Structure on Silicon
Wafer size
2″, 4″, 6″,8″
AlGaN/GaN HEMT structure
Refer 1.2
Residual 2DEG density (Vg=0 V)
<1e18/cm3
AFM RMS (nm）of 5x5um2
<0.25nm
Bow(um)
<=30um
Edge exclusion
<5mm
p-GaN
/
u-GaN cap layer
/
Al composition
20-30%
AlGaN barrier layer
/
GaN channel
/
AlGaN buffer
/
Substrate material
Silicon substrate
Si wafer thickness (μm)
675um(2″), [...]
2019-05-17meta-author
