The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
2020-02-11meta-author
Thanks to GaAs tunnel junction technology, we offer epi wafers of single-junction and dual-junction InGaP / GaAs solar cells, with different structures of epitaxial layers (AlGaAs, InGaP) grown on GaAs for solar cell application. And now we offer GaAs epi wafer with InGaP tunnel junction as [...]
The vibrational energy of the molecule is larger than the rotational energy. When the vibrational energy level transition occurs, it is inevitably accompanied by the transition of the rotational energy level, so the pure vibrational spectrum cannot be measured, but only the vibrational-rotational spectrum [...]
2022-06-08meta-author
PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.
Major capability parameter
Material purity
>99.995%
Crystal structure
M6
Unit cell constant
a=5.154Å c=13.783 Å
Melt point(℃)
1650
Density
7.45(g/cm3)
Hardness
5.5~6(mohs)
Color
Colorless
Index of refraction
no=2.176 ne=2.180 (633nm)
Through scope
0.4~5.0mm
Resistance coefficient
1015wm
Dielectric [...]
2019-03-13meta-author
In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studied. Wet etching can effectively reveal the dislocations in GaN, [...]
PAM XIAMEN offers Silicon Carbide (SiC) Wafers and Crystals.
PAM XIAMEN offers the best prices on the market for high-quality silicon carbide wafers and substrates up to six (6) inch diameter with both N type and Semi-insulating types. Our SiC wafers have been widely [...]
2019-03-15meta-author