100mm N type GaN substrate
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:
4″(100mm) Undoped Free-standing GaN Substrate
Item
PAM-FS-GaN100-U
Conduction Type
Undoped
Size
4″(100)+/-1mm
Thickness
350-450um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
–
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
–
Resistivity(300K)
<0.5Ω·cm
Dislocation Density
<5×10^6cm-2
FWHM
–
TTV
<=35um
BOW
<=50um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
Usable Area
≥ 90 %
4″(100mm) N-doped [...]
2020-03-25meta-author
Advantech Wireless releases GaN whitepaper
The company’s paper discusses gallium nitride based solid state power amplifiers for satellite communication
Advantech Wireless, a Canadian-based manufacturer of broadcast-quality Satellite, RF Equipment and Microwave Systems has released a new whitepaper titled, “A new generation of Gallium Nitride (GaN) based [...]
2012-08-30meta-author
In this study, we reformulated the problem of wafer probe operation in semiconductor manufacturing to consider a probe machine (PM) which has a discrete Weibull shift distribution with a nondecreasing failure rate. To maintain the imperfect PM during the probing of a lot of [...]
PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain
Xiamen Powerway focuses on high-end compound semiconductor epitaxial R&D and manufacturing.
In 2018, the 4-inch and 6-inch VCSELs were mass-produced and entered the mainstream chip manufacturers in Taiwan. Utilizing state-of-the-art [...]
2019-01-21meta-author
PAM XIAMEN offers 3″ Silicon Wafer-14
3″ Si wafer(32849), R≥200Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: N-type/ phosphorus
.3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> axis direction
5. Resistivity: ≥200Ωcm
6. Primary surface: semi std
7. Secondary surface: none
8. Thickness: 380±25μm
9. Overall thickness variation on the plate [...]
2019-11-08meta-author
Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 µm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface [...]
2019-03-27meta-author
