PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2973
n-type Si:P
[100]
4″
500
P/P
FZ 198-200
SEMI Prime, 2Flats, Empak cst
PAM2974
n-type Si:P
[100-6°] ±0.5°
4″
325
P/P
FZ 1-10
SEMI Prime, 2Flats, Empak cst
PAM2975
Intrinsic Si:-
[100]
4″
300
P/P
FZ >20,000
SEMI Prime, 1Flat, [...]
2019-02-22meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
32 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.6×4.4mm2
12.9×4mm2
Thickness
2.0mm
Pixel array
16×1
32×1
Pixel size
0.9×2.0mm2
0.3×0.3mm2
Electrode material
Au
Standard working voltage
450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
<0.01nA
Max. counting rate
>0.7Mcps/mm2
>8.0Mcps/mm2
Operation temperature
15℃~35℃
Storage [...]
2019-04-24meta-author
The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks
This paper studies the effect of anisotropy on the response of an R -plane sapphire wafer to a rapid thermal loading. The finite element method was used to analyse the [...]
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
2019-07-22meta-author
Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows [...]
In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studied. Wet etching can effectively reveal the dislocations in GaN, [...]