3″ Silicon Oxide Wafer

PAM XIAMEN offers 3″ Silicon Oxide Wafer

3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles < (µm): any
Laser Mark String: None
SiO2 Layer (nm): 100nm and 200nm
SiN Layer (nm): None
Other Layer: None

For more information, send us email at [email protected] and [email protected]

2020-04-24

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The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks

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Laser recovery of grinding-induced subsurface damage in the edge and notch of a single-crystal silicon wafer

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Distribution of defects and impurities in gallium arsenide wafers after surface gettering

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Dislocations in Gan Grown on Silicon

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[email protected] [email protected]

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Read More

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Read More

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3″ Silicon Oxide Wafer

3″ Silicon Oxide Wafer

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