M Plane N-GaN Freestanding GaN Substrate
PAM-XIAMEN offers M Plane N-GaN Freestanding GaN SubstrateItem
PAM-FS-GAN M-NDimension
5 x 10 mm2Thickness
380+/-50umOrientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°Conduction Type
N-typeResistivity (300K)
< 0.05 Ω·cmTTV
≤ 10 µmBOW
BOW ≤ 10 µmSurface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.Dislocation Density
≤ 5 x 10 6cm-2Macro Defect Density
0 cm-2Useable Area
> 90% (edge exclusion)Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-17meta-author
PAM XIAMEN offers Au coated Silicon wafer /Microscope Slides.
High quality glass, standard microscope slides coated with 100nm of gold with a 5nm Titanium adhesion layer between the glass slide surface and the gold coating. Can be used for a wide range of nanotechnology, [...]
2019-04-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer.Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade100
N
Phos
CZ
-100
1-20
43768
P/P
PRIME100
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME100
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME100
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME100
N
Phos
CZ
-100300-350
P/P
PRIME100
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME100
N
Phos
CZ
-100350-400
P/P
PRIME100
N
Phos
CZ
-100
1-3
350-400
P/P
PRIME100
N
As
CZ
-100
.001-.005
375-425
P/P
PRIME100
N
Phos
CZ
-100
1-20
375-425
P/E
PRIME100
N
Phos
CZ
-100450-500
P/P
PRIME100
N
As
CZ
-100
.001-.005
450-500
P/P
PRIME100
N
Sb
CZ
-100
.005-.02
450-500
P/P
PRIME100
N
Phos
FZ
-100
>3000
450-500
P/P
PRIME100
N
As
CZ
-100
.001-.005
500-550
P/E
PRIME100
N
Sb
CZ
-100
.005-.02
500-550
P/E
PRIME100
N
Phos
FZ
-100
>3000
500-550
P/E
PRIME100
N
Phos
CZ
-100
1-20
500-550
P/E
PRIME100
N
Phos
CZ
-100
1-20
500-550
P/E/DTOx
PRIME100
N
Phos
CZ
-100
1-20
500-550
P/E/Ni
PRIME100
N
Phos
CZ
-100
1-20
500-550
P/E/OX
PRIMEFor more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers 4″ Silicon Wafer.Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Commentp-type Si:B
[100]
4″
2100
P/E
1-100
SEMI Prime, Manual Edgesp-type Si:B
[100]
4″
3000
P/P
1-10
SEMI Primep-type Si:B
[100]
4″
3175
P/P
1-10
SEMI Prime, TTV<8μmp-type Si:B
[100]
4″
3200
P/E
1-100
SEMI Prime, Sealed as group of 9 wafersp-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Primep-type Si:B
[100]
4″
4000
P/P
1-100
SEMI Primep-type Si:B
[100]
4″
5000
P/E
1-100
Prime, NO Flatsp-type Si:B
[100]
4″
890 ±15
P/P
0.5-10.0
SEMI TEST (Scratches), TTV<8μmp-type Si:B
[100] ±0.2°
4″
300
P/P
0.1-0.3
SEMI Primep-type Si:B
[100] ±1°
4″
490 ±5
P/P
0.1-1.0
SEMI Prime, TTV<0.8μmp-type Si:B
[100]
4″
525
P/E
0.1-0.2
SEMI Primep-type Si:B
[100]
4″
350
P/E
0.095-0.130
SEMI Primep-type [...]
2019-03-05meta-author
PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline).
General Properties for Molybdenum
Symbol Mo
Atomic Number 42
Atomic Weight: 95.96 g/mol
Crystal structure: BCC
Lattice constant at room temperature : 0.315 nm
Density: 10.28 g/cm3
Melting Point: 2623 °C
Boiling Point: 4639 °C
Mo Polycrystalline Substrate: [...]
2019-05-08meta-author
Issues for the larger diameter epitaxial wafer
In order to establish the epitaxial wafer as the main substrate for semiconductor devices produced on large diameter wafers over 300 mm, the epitaxial wafer must satisfy stringent requirements in terms of both quality and costs. Before proceeding [...]
