PAM XIAMEN offers 4″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
n-type Si:P | [100] | 4″ | 525 | P/P | 1-100 | SEMI Prime, TTV<5μm |
n-type Si:P | [100] | 4″ | 525 | P/E | 0.3-0.5 | SEMI |
n-type Si:P | [100] | 4″ | 300 | P/E | 0.29-0.31 | SEMI Prime |
n-type Si:P | [100] | 4″ | 200 | P/P | 0.10-0.15 | SEMI Test, Not sealed both sides scratched |
n-type Si:P | [100] | 4″ | 200 | P/P | 0.10-0.15 | SEMI Test, Both sides with scratches |
n-type Si:P | [100] | 4″ | 200 | P/E | 0.10-0.15 | SEMI Prime, Front-side Prime, Back-side Test grade polish |
n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.020-0.022 | Prime |
n-type Si:Sb | [100-6° towards[110]] ±0.5° | 4″ | 525 | P/E | 0.015-0.020 | SEMI Prime |
n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.011-0.014 | Prime |
n-type Si:Sb | [100] | 4″ | 305 ±3 | P/P | 0.010-0.025 | SEMI Prime, TTV<1μm |
n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.01-0.02 | SEMI Prime, TTV<5μm |
n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.01-0.02 | SEMI Prime |
n-type Si:As | [100] | 4″ | 525 | P/E | 0.0025-0.0035 | SEMI Prime |
n-type Si:As | [100] | 4″ | 525 | P/E | 0.0025-0.0035 | SEMI Prime |
n-type Si:As | [100] | 4″ | 545 | E/E | 0.002-0.004 | SEMI |
n-type Si:As | [100] | 4″ | 525 | P/P | 0.001-0.005 | SEMI Prime |
n-type Si:As | [100] | 4″ | 525 | P/P | 0.001-0.005 | SEMI Prime, TTV<5μm |
n-type Si:As | [100] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Prime, TTV<5μm |
n-type Si:As | [100] | 4″ | 525 | P/E | 0.001-0.005 | SEMI Test (Chipped edge) |
n-type Si:As | [100] | 4″ | 525 | PlyAP/E | 0.001-0.005 | With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, |
n-type Si:As | [100] | 4″ | 550 ±10 | P/P | 0.001-0.005 | SEMI Prime |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.