PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm,
TTV<5μm, Bow<20μm, Warp<30μm,
One-side-Epi-Ready-polished, back-side etched, SEMI Flats,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our [...]
2019-07-05meta-author
How Does Semiconductor Wafer Technology?
Edit by PAM-XIAMEN
The development of silicon wafer can be attributed to the development of Moore’s law. Because the silicon wafer for semiconductor is round, so the semiconductor silicon wafer is also called “silicon wafer” or “wafer”. Wafer is the “substrate” [...]
2020-04-21meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Incipient plasticity in 4H-SiC during quasistatic nanoindentation
Published by:
Saurav Goel ;Jiwang Yan ;Xichun Luo ;Anupam Agrawald
a School of Mechanical and Aerospace [...]
2019-12-09meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN on Sapphire substrate and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, [...]
2017-12-28meta-author
Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point defects. The positions of the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and the room-temperature and high-temperature p-n lines were evaluated from high-temperature in situ [...]
2019-07-16meta-author
AlN thin film, as a piezoelectric material with a wurtzite structure, has attracted much attention due to its excellent performance. However, compared with other piezoelectric materials such as Pb (ZrxTi1-x) O3 (lead zirconate titanate, PZT), pure AlN thin films exhibit poorer piezoelectric response. Doping [...]
2024-04-24meta-author