Incipient plasticity in 4H-SiC during quasistatic nanoindentation

Incipient plasticity in 4H-SiC during quasistatic nanoindentation

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Article title:Incipient plasticity in 4H-SiC during quasistatic nanoindentation

Published by:

Saurav Goel ;Jiwang Yan ;Xichun Luo ;Anupam Agrawald

a School of Mechanical and Aerospace Engineering, Queen’s University, Belfast BT95AH, UK
b Department of Mechanical Engineering, Keio University, Yokohama 223-8522, Japan
c Department of Design, Manufacture and Engineering Management, University of Strathclyde, Glasgow G11XQ, UK
d Department of Business Administration, University of Illinois at Urbana Champaign, 61820, USA

Picture of SiC wafer:






Silicon carbide (SiC) is an important orthopedic material due to its inert nature and superior mechanical and tribological properties. Some of the potential applications of silicon carbide include coating for stents to enhance hemocompatibility, coating for prosthetic-bearing surfaces and uncemented joint prosthetics. This study is the first to explore nanomechanical response of single crystal 4H-SiC through quasistatic nanoindentation. Displacement controlled quasistatic nanoindentation experiments were performed on a single crystal 4H-SiC specimen using a blunt Berkovich indenter (300 nm tip radius) at extremely fine indentation depths of 5 nm, 10 nm, 12 nm, 25 nm, 30 nm and 50 nm. Load–displacement curve obtained from the indentation experiments showed yielding or incipient plasticity in 4H-SiC typically at a shear stress of about 21 GPa (~an indentation depth of 33.8 nm) through a pop-in event. An interesting observation was that the residual depth of indent showed three distinct patterns: (i) positive depth hysteresis above 33 nm, (ii) no depth hysteresis at 12 nm, and (iii) negative depth hysteresis below 12 nm. This contrasting depth hysteresis phenomenon is hypothesized to originate due to the existence of compressive residual stresses (upto 143 MPa) induced in the specimen by the polishing process prior to the nanoindentation.

Subjuect(s):SiC ;Nanoindentation ;Plasticity ;Elastic response

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… similar instruments. The specimen used was a single crystal 4H-SiC wafer having crystal orientation (001), diameter 50 mm and thickness 5 mm which was supplied by PAM-Xiamen Power-way Advanced Material Co. Ltd., China …”


About Xiamen Powerway Advanced Material Co., Ltd

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.

PAM-XIAMEN also offer GaAs/InP and GaN material from wafer substrate to epitaxial growth.

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