Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author
PAM XIAMEN offers YVO4 Undoped Yttrium Orthovanadate Crystals.
UNDOPED YVO4 IS AN EXCELLENT NEWLY DEVELOPED BIREFRINGENCE OPTICAL CRYSTAL.
It has very good transmission in a wide wavelength range from visible to infrared.
It has large index of refractivity and birefringence difference.
Compared with other important birefringence crystals, YVO4 has higher. [...]
2019-03-18meta-author
PAM-XIAMEN can supply SiC seed crystal for single crystal growth, specific parameters can be found in: https://www.powerwaywafer.com/sic-seed-crystal.html
Seed crystals have a significant influence on the initial nucleation of crystals. The surface morphology of the crystal nucleation stage can to some extent reflect the rich information of crystal growth mechanism [...]
2024-04-08meta-author
Atomic Layer Deposition (ALD), also known as atomic layer epitaxy (ALE), is an atomic-scale thin film preparation technology. It can deposit ultra-thin films with uniform thickness, controllable thickness and adjustable composition. With the development of nanotechnology and semiconductor microelectronics, the size requirements of devices [...]
2022-05-31meta-author
PAM XIAMEN offers PECVD Nitride
PECVD nitride is an alternative to LPCVD nitride when lower temperature ranges are required. Micro-mechanicalWidely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer or to [...]
2019-02-12meta-author
Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]