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Ceramic ALN SUBSTRATE-2

PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 1.0±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 　 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5   For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

2019-07-03 Read more...

Ceramic ALN SUBSTRATE-1

PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 0.5±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 　 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5   For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

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4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer. 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5度), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au [...]

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3″ FZ Prime Silicon Wafer Thickness: 350±15um

PAM XIAMEN offers 3″FZ Prime Silicon Wafer Thickness: 350±15um. 3″ Si epi-ready wafer Si wafer FZ Diameter: 76mm Thickness: 350±15um Dopant: P Orientation: (100) Resistivity: 500-1000 Ohm*cm Double side polished, epi-ready laser mark with numbering from N1k- 001 to NN1k- 200 for alll 200pcs For more information, please visit [...]

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3″ Prime EPI Wafer

PAM XIAMEN offers 3″ Prime EPI Wafer. Details of Prime 3″ Silicon Wafer Specification CZ SUBSTRATE: Orientation : 111 OFF orientation : 3° – 4° Type/Dopant : n/Sb Resistivity Ω cm : <0.018 Diameter mm : 76.2 +/- 0.5 Flats : SEMI Flat, location : 110 +/- 2 degree [...]

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FZ Silicon Ignot Diameter 80+1mm-2

PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com [...]

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FZ Silicon Ignot Diameter 60+1mm-2

PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com [...]

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FZ Silicon Ignot Diameter 80+1mm-1

FZ Silicon Ignot Diameter 80+1mm-1 PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: [...]

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FZ Silicon Ignot Diameter 60+1mm-1

PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

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6″ Prime EPI Wafer

PAM XIAMEN offers 6″ Prime EPI Wafer. 6″ EPI Wafer diameter: 6″ (150 +-0,5 mm) orientation: <100> primary flat length: 57.5mm+/-2.5mm primary flat: <110> +/- 1 no secondary flat overall thickness 280-325μm TTV <10um WARP/BOW <50um TIR <3um EPI layer: -type: n -dopant: P (phosphorus) – resistivity: 10-16 ohm [...]

2019-07-03 Read more...