FZ Silicon Ignot Diameter 60+1mm-2

PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm.

FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-07-03

Related Posts

GaAs HEMT epi wafer

GaAs HEMT epi wafer We can offer 4″GaAs HEMT epi wafer with 2D electron gas (2DEG) with very high electron mobility of 5-7E5 cm2/V.s, please see below typical structure: Structure1: 4″AlGaAs/GaAs HEMT epi wafer( PAM200416-HEMT):HEMT structure ThicknessGaAs cap layer 100AAlGaAs, x=0.28,barrier layer, Si doped 7E17 500AAlGaAs, x=0.28,spacer layer 150AGaAs 0.5umAlxGaAs/GaAs, x=0.28, [...]

2013-11-19meta-author GaAs HEMT epi wafer

Control of spatial distribution of As clusters in LT GaAs by indium delta doping

2014-03-24meta-author

Use the Following Substrate for 2D Materials

PAM XIAMEN offers Silicon Substrate. Below are just two items our clients use to work with 2D Materials. Si 150mm P/B <100> 0-100 ohm-cm 625um SSP Test Grade Si 100mm N/As <100> 0.001-0.005 ohm-cm 500um SSP Prime Grade For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] [...]

2019-02-26meta-author

Ge epi-film on Si

PAM XIAMEN offers Ge epi-film on Si. 4” N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness 4” P-type Ge film on N-type Silicon Wafer, 0.5 um thickness For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] [...]

2019-04-28meta-author

Size and distribution of Te inclusions in detector-grade CdZnTe ingots

Size and distribution of Te inclusions in detector-grade CdZnTe ingotsTo observe the Te inclusions distribution along the axial direction of CdZnTe ingots, batches of as-grown detector-grade CdZnTe crystals grown by vertical Bridgman method, were investigated using IR transmission imaging. However, there is not a [...]

2014-03-28meta-author CdZnTe

Ceramic Substrate-5

PAM XIAMEN offers Aluminum Oxide Substrate Al2O3. Aluminum Oxide Ceramic Substrates PorpertiesPurity (wt%) 0.96 0.996 0.996 0.999Density (g/cm3) > 3.75 3.88 3.87 3.92Thermal conductivity (W/m. K) 24 34.7 35 35Thermal Expansion (x10-6/oC) < 7.7 7~8.3 7~8.3 8.1Dielectric Strength (Kv/mm) > 14 23.64 23.64 8.7Dielectric Constant (at 1MHZ) 9.8 9.9 9.9 9.8Loss Tangent (x10-4 @1MHZ) 4 1 1 < 1Volume Resistivity (ohm-m) > 1013 at [...]

2019-04-18meta-author

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.