FZ Silicon Ignot Diameter 60+1mm-2

  • Home
  • News
  • FZ Silicon Ignot Diameter 60+1mm-2

PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm.

FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-07-03

Share this post

Related Posts

Electrical transportation and piezotronic-effect modulation in AlGaN/GaN MOS HEMTs and unpassivated HEMTs

Highlights • The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator. • The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device. • The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures. Abstract The metal-oxide-semiconductor [...]

2017-10-12meta-author
GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE

GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were not significantly affected by the hole concentration of the p-GaAs although a lattice mismatch at the junction generates misfit dislocations. A good I-V characteristic with [...]

2019-01-14meta-author
TGG (Terbium Gallium Garnet)

PAM XIAMEN offers TGG (Terbium Gallium Garnet). TGG singlecrystal（ Terbium Gallium Garne ） is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm. TGG Single Crystal Substrate: (111) 10 x 10 x. [...]

2019-05-20meta-author
InGaAsN epitaxially on GaAs or InP wafers

InGaAsN epitaxially on GaAs or InP wafers PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows: Layer Doping Thickness (um)  Remark GaAs  undoped ~500 <001> wafer substrate InGaAsN*   undoped 0.150 band gap <1 eV Al(0.3)Ga(0.7)As  undoped 0.5 GaAs             undoped 2 Al(0.3)Ga(0.7)As   undoped 0.5               ITEM x/y Doping carrier conc.(cm3) Thickness（um） wave length(um) Lattice mismatch InAs(y)P 0.25 none 5.0*10^16 1.0 –   In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600 InAs(y)P 0.25 S 1.0*10^18 205.0 –   InAs(y)P 0.05->0.25 S 1.0*10^18 4.0 –   InP – S 1.0*10^18 0.3 –   Substrate:InP   S (1-3)*10^18 ~350 –   Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com [...]

2015-04-03meta-author , ,
Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

Highlights •MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates. •In-depth structural characterizations showing no back-etching of ZnO. •Chemical lift-off and wafer-bonding of the structure on float glass. •Structural characterizations of the device on glass. Abstract p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal [...]

2016-02-03meta-author , ,
InP Wafer

PAM XIAMEN offers InP Wafer. InP(100) InP (100) Sn-doped InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp InP (100)undoped InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp VGF InP (100) undoped, 2″ x 0.35 mm wafer, 1sp VGF InP (100) undoped, 2″ x [...]

2019-05-06meta-author