PAM XIAMEN offers 4″ Prime EPI Wafer. Substrate: 1. Growth Method CZ 2. Diameter100+/-0.5mm 3. Type-Dopant, P- Boron 4. Resistivity 0.002 – 0.003 ohm-cm 5. Resistivity Radial Variation<10 % 6. Crystal Orientation<111> 4+/- 0.5degree 7. Primary Flat: Orientation Semi degree, Length Semi mm 8. Secondary Flat: Orientation Semi degree, [...]
PAM XIAMEN offers 6″ FZ Silicon Ignot. 6″ Silicon Ingot FY37b. 11.817Kg Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ Intrinsic undoped Si:-[100]±2.0°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, Length: 286mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping 4″ CZ crystal Si wafer N type doped P Orientation<111> Resistivity 12-15Ωcm Thickness 205-220μm Prime Flat32.5±2.5mm no need for DSP, just double side lapping For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found [...]
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide. 2 inches in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns [...]
PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm. Diameter 150mm Thickness 1500±25μm phosphorus, boron or Antimony doped boron,<100> SSP Resistivity 1-100ohm cm with 200A thermal oxide and 1200A nitride TTV < 15um BOW < 80um For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]
PAM XIAMEN offers 4″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×300±25µm, p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm, TTV<10µm, Bow<40µm, Warp<40µm, Both-sides-polished, SEMI Flats (two), Sealed in Empak cassette. Primary Flat: 32.5±-2.5, 110±1°。 Secondary Flat: 18±2，90°±5° For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]
PAM XIAMEN offers 6″ silicon ignot. Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ p-type Si:B[100]±2.0°, Ro=(600-900)Ohmcm, RRV<8%, Ground Ingot, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1000µs, CofC inlude Resisistiviy (9points) and MC Lifetime measurement data, RRV calculations. For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]
PAM XIAMEN offers 4″ Prime Silicon Wafer Thickness 675 +/- 20 microns. Wafers 4 inches in a diameter of monocrystalline silicon with an insulating oxide. 100 mm in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for microelectronics Thickness: 675 +/- 20 [...]
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″{100.0±0.2}Ø×500±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found [...]
PAM XIAMEN offers 6″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 6″ {150.0±0.3mm}Ø×625±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]
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