PAM XIAMEN offers Ge epi-film on Si.
4” N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness
4” P-type Ge film on N-type Silicon Wafer, 0.5 um thickness
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-04-28meta-author
PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-13meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InAlAs and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are [...]
2017-10-25meta-author
PAM-XIAMEN can provide AlGaN/GaN HEMT heterostructure, like GaN on SiC HEMT wafer, for more wafer parameter please read: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html. Based on the strong polarization-induced effect and the huge energy band shift, the interface of the III-nitride heterostructure can form a strong quantum localized high-concentration [...]
2022-07-07meta-author
Wide Bandgap Technology –Next Generation Power Devices
The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 [...]
2018-08-30meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-1
tem2, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-25meta-author