LaAlO3 (Lanthanum Aluminate) substrate is available for. LaAlO3 substrate is commonly used for epitaxial growth of thin films such as high Tc superconductors, magnetic and ferroelectric materials. The dielectric properties of LaAlO3 crystal make it suitable for low loss microwave and dielectric resonance electronics [...]
2019-03-12meta-author
PAM XIAMEN offers Ge epi-film on Si.
4” N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness
4” P-type Ge film on N-type Silicon Wafer, 0.5 um thickness
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-04-28meta-author
PAM XIAMEN offers InSb Wafer.
InSb Ge-doped
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1
InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]
2019-05-07meta-author
PAM XIAMEN offers 6″FZ Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 6″ {150.0±0.5mm}Ø×1,000±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm,
One-side-polished, Particles: <10@≥0.3µm,
back-side etched, One SEMI Flat (57.5mm), Edges: rounded,
Sealed in Empak or equivalent cassette,
BOW<30µm, MCCLifetime>1000µs.
For more information, please [...]
2019-08-22meta-author
‘Optically pumped’ laser closer to improving processing speed of sensors
Researchers are developing a new material that could improve processing speed of sensors and other electronic components. Credit: University of Arkansas
Imagine creating a material for the digital information highway that allows a fast lane of [...]
2018-02-11meta-author
As a leading manufacturer of semiconductor materials, PAM-XIAMEN aims to supply high quality semiconductor wafers including substrate and epitaxy of SiC, GaN, GaAs and other materials, supporting scientists and engineers around the world to develop and innovate technology. Please view https://www.powerwaywafer.com/products.html for more wafers.
The list [...]
2022-08-26meta-author