PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film, specifications are as follows:
1. Specifications of Coated Silicon Wafer
Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal
SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate [...]
2019-04-29meta-author
PAM XIAMEN offers Si wafers.
Our clients often use the following silicon wafers for the above applications:
100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
PDMS micro-fluidic chip platforms for micro-organoid cell culture applications.
Microfluidic platform
Characterization
Definition of a microfluidic platform
A microfluidic platform provides a set of fluidic unit operations, which are [...]
2019-02-25meta-author
PAM XIAMEN offers Si+SiO2+Pt Thin Film.
Si+SiO2+Pt Thin Film
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
Silicon Wafer Specifications:
Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm)
Resistivity: [...]
2019-05-16meta-author
PAM-XIAMEN, a leading SiC epitaxial wafer manufacturer, can offer 4H SiC epitaxial wafers for MOS fabrication, which refer to a single crystal film(epitaxial layer) with certain requirements and the same crystal growing on a silicon carbide substrate. The SiC epitaxial wafer market size is [...]
2021-05-17meta-author
PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.
Major capability parameter
Growth method
hydro-thermal method
Crystal Structure
M6
Unit cell constant
a=4.914Å c=5.405 Å
Melt point(℃)
1610℃
Density
2.684g/cm3
Hardness
7(mohs)
Thermal conductivity
0.0033cal/cm℃
Planned constant
1200uv/℃(300℃)
Index of refraction
1.544
Thermal expansion
α11:13.71×106 / ℃ α33:7.48×106 /℃
Frequency constant
1661(kHz/mm)
Crystal orientation
Y、X or Z,30º~42.75 º ±5
Polishing
Single or double Ra<10Å
Thickness
0.5mm±0.05mm TTV<5um
Diameter
Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning:22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning :10mm±1.5mm
For more information, please [...]
2019-03-15meta-author
PAM XIAMEN offers Pyrolytic Boron Nitride.
Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production.
Good [...]
2019-05-14meta-author