PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
500-550
P/E/WTOx
100
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
100
N
Phos
CZ
-100
50-70
4850-5050
P/E
PRIME
100
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
100
N
Phos
CZ
-100
>10
9900-10100
P/P
PRIME
100
N
Phos
CZ
-111
1-10
4000-6000
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/P
PRIME
100
N
Phos
FZ
-111
2000-4000
275-325
P/P
PRIME
100
N
Phos
CZ
-111
450-500
P/P
PRIME
100
N
Phos
FZ
-111
> 20000
475-525
P/P
PRIME
100
N
As
CZ
-111
.001-.005
500-550
P/E
PRIME
100
N
Phos
CZ
-111
1-20
500-550
P/E
PRIME
100
N
Phos
FZ
-111
2000-4000
500-550
P/P
PRIME
100
N
Phos
CZ
-111
1-20
4800-5200
P/E
PRIME
100
N
Phos
CZ
-111
1-3
11300-11500
P/E
PRIME
100
N
Phos
CZ
-110
450-500
P/P
PRIME
100
N
Phos
CZ
-110
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
175-225
P/P
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
200-250
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
325-375
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
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A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
2012-03-06meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
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2019-03-12meta-author
PAM XIAMEN offers single crystal LiTaO3.
LiTaO3 X-cut
LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP
LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp
LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp
LiTaO3, 4″ wafer, specific parameters as follows:
4″ LT Wafer Specification
Diameter
100.0±0.5mm
Orientation Flat (OF)
30±2mm
Second Refer. Flat [...]
2019-05-08meta-author
Highlights
•Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice.
•Emphasis on understanding the inconclusive crystalline morphology at initial layers.
•Observed low TD in HRTEM and low RMS in AFM.
•Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD.
•SAEDP shows fcc [...]