PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm
4inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 101.6mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished.
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
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PAM XIAMEN offers Silicon Ingots.
Material Description
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