Silicon Ingots-8

Silicon Ingots-8

PAM XIAMEN offers Silicon Ingots.

Material Description
3″Ø×174mm p-type Si:Ga[100] (1.77-2.13)Ωcm, Ingot “As-Grown”, (82-85)mmØ, RRV=8%, Oxygen=6.2E17/cc
4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F))
3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1-10 Ohmcm, As-Grown, (3 ingots: 217mm, 32mm, 169mm)
3″Ø×36mm ingot, p-type Si:B[211]±2°, Ro:1-10Ohmcm, Ground
3″Ø ingot p-type Si:B[112], Ro: 0.001-0.005 Ohmcm, (1 ingot: 76mm)
3″Ø ingot n-type Si:As[100], Ro: 0.0048-0.0049 Ohmcm, Ground, (1 ingot: 100mm)
3″Ø ingot n-type Si:P[100] ±2°, Ro: 1.25-2.50 Ohmcm, Ground, (3 ingots: 57mm, 144mm, 370mm) SEMI
3″Ø×33mm ingot, n-type Si:P[111] ±3°, (10-30)Ohmcm {actual 10.9-12.58}
3″Ø ingot n-type Si:Sb[100], Ro: 0.01-0.02 Ohmcm, (1 ingot: 280mm) 2Flats (2nd flat is 140º from primary)
2″Ø ingot n-type Si:P[100] ±2°, Ro: 10-35 Ohmcm, (4 ingots: 22.5mm, 20.2mm, 19.2mm, 19.8mm)
2″Ø ingot p-type Si:B[110] ±2.0°, Ro: 10-20 Ohmcm, (1 ingot: 36mm)
2″Ø ingot p-type Si:B[111], Ro: >1 Ohmcm, (2 ingots: 83mm, 216mm)
2″Ø ingot p-type Si:B[111] ±2°, Ro: 1-10 Ohmcm, Ground, (1 ingot: 45mm)
2″Ø ingot Si[100] ±2°, Ro: Ohmcm
1″Ø ingot p-type Si:B[111], Ro: 0.04-0.06 Ohmcm, Ground, (1 ingot: 102mm)
1″Ø ingot n-type Si:P[100] ±3°, Ro: 0.05-0.15 Ohmcm
1″Ø ingot n-type Si:Sb[100], Ro: 0.0118-0.0132 Ohmcm, Each ingot 0.06Kg, 52mm and $100 for piece(4 ingots: 52mm, 52mm, 52mm, 52mm)
1″Ø ingot n-type Si:Sb[100] ±2°, Ro: 0.0176-0.0180 Ohmcm, Ground,, (b)2 Pieces available and more than 76mm long(/b)
25.4Ø ingot n-type Si:As[100] ±2.0°, Ro: 0.001-0.005 Ohmcm,, Each piece is 100±1mm long, 0.12Kg
1″Ø ingot n-type Si:P[111], Ro: 15-22 Ohmcm,, 3 pieces each 0.09Kg, 77.5mm long
1″Ø ingot n-type Si:Sb[111], Ro: 0.05-0.09 Ohmcm, (3 ingots, each 1″Ø, 0.071Kg, 59mm long
1″Ø ingot n-type Si:Sb[111], Ro: 0.05-0.09 Ohmcm, (1 ingot: 136mm) SEMI
CZ SCRAP material p-type, Ro: 1-1,000 Ohmcm
CZ SCRAP material n-type, Ro: 1-1,000 Ohmcm
CZ SCRAP material CZ mix of n-type and p-type, Ro<1 Ohmcm

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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