PAM XIAMEN offers Single crystal GaTe Substrate.
Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the [...]
2019-04-22meta-author
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics
The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]
PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
2019-03-13meta-author
PAM XIAMEN offers ITO/ZnO coated Sodalime Glass.
ITO/ZnO Coated Glass Substrate 1″ x 1″ x 0.7 mm, ITO Film=100nm, ZnO film=50nm
ITO/ZnO Coated Sodalime Glass ITO film=100nm,ZnO film=50nm
Dimension: 1″ x 1″ x 0.7 mm
Resistivity: N/A
ITO film=100nm,ZnO film=50nm
For more information, please visit our website: [...]
2019-04-28meta-author
High purity undoped or Intrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) are offered, its carrier concentration is extremely low(for detail data, please consult our team: tech@powerwaywafer.com) and its resistivity is high, semi-insulating. Some researchers use its property to study color centers in wide band-gap [...]
2020-03-10meta-author
Single crystal AlN substrate can be provided with specifications as found in https://www.powerwaywafer.com/aln-substrate.html.
AlN single crystal is the direct bandgap semiconductor material with the largest bandgap width (6.2 eV), which has excellent characteristics such as extremely high breakdown field strength, excellent thermal conductivity, stable physical and [...]
2024-04-18meta-author