PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2383
n–type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground
PAM2384
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
PAM2385
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ [...]
2019-02-19meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading
Published by:
Quanli Zhang ; Zhen Zhang ; Honghua [...]
2019-12-02meta-author
PAM XIAMEN offers GaP Substrtaes (110).
GaP Wafer, undoped (110) 10x10x0.45 mm, 1sp
GaP Wafer, undoped (110) 10x10x0.5 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.2 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.3 mm, 1sp”
GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp
For more information, [...]
2019-04-22meta-author
PAM XIAMEN offers Te-Dy-Fe (Directionally solidified GMM).
Giant magnetostrictive material is an alloy made of terbium, dysprosium and iron by directional solidification. It can change electrical energy into mechanical action or vice versa because of its merit as being sensing and actuating material. Demanding [...]
2019-05-20meta-author
Reliability analysis of InGaN Blu-Ray laser diode
The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while [...]
2014-03-03meta-author
InGaN
Silicon-on-insulator (SOI) wafer is one of the most appealing platforms for optical integrated circuit with the potential to realize high performance Ultra Large Scale Integration (ULSI) and device miniaturization. In this work, based on simulations to obtain appropriate optical properties of a porous silicon [...]