Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide gate and 3C-SiC is lower, which is [...]
2023-12-08meta-author
PAM-XIAMEN can supply SiC seed crystal for single crystal growth, specific parameters can be found in: https://www.powerwaywafer.com/sic-seed-crystal.html Seed crystals have a significant influence on the initial nucleation of crystals. The surface morphology of the crystal nucleation stage can to some extent reflect the rich information of crystal growth mechanism [...]
2024-04-08meta-author
Ge/SiO2 direct wafer bonding by O2-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO2 bonding was achieved after a 1500C annealing for 60 hours. The excessive O2-plasma exposure resulted in micro-crack [...]
2020-03-09meta-author
Livermore, CA and Tokyo (Marketwire) – Bridgelux Inc., a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry’s top class 8″ GaN on SiliconLED chip emitting [...]
2012-05-22meta-author
PAM XIAMEN offers 6″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 6″ 675 P/E 1-100 SEMI Prime, 1Flat (57.5mm) p-type Si:B [100] 6″ 800 E/E 1-50 SEMI, 1Flat (57.5mm), TTV<5μm p-type Si:B [100] 6″ 320 P/E 0.001-0.030 JEIDA Prime p-type Si:B [100] 6″ 675 P/P 0.001-0.005 SEMI Prime, 1Flat (57.5mm) p-type Si:B [100] 6″ 675 P/E 0.001-0.005 SEMI Prime, 1Flat (57.5mm) p-type Si:B [111-4.0°] ±0.5° 6″ 625 P/E 4-15 {7.1-8.8} SEMI Prime, 1 JEIDA Flat(47.5mm) p-type Si:B [111] ±0.5° 6″ 675 E/E 0.010-0.025 SEMI, 1Flat (57.5mm) n-type Si:P [100] 6″ 925 ±15 E/E 5-35 {12.5-29.7} JEIDA Prime, TTV<5μm n-type Si:P [100] 6″ 675 P/E 2.7-4.0 SEMI Prime n-type Si:P [100] 6″ 250 ±5 P/P 1-3 SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers Cu – single crystal Substrates & Polycrystalline & Copper Foam. 1. General Properties for Single Crystal Copper Symbol : Cu Atomic Number: 29 Atomic Weight: 63.546(3 Crystal structure: FCC -Face centered cubic Density: 8.96 g/cm3 Melting Point: 1357.77 K (1084.62 °C, 1984.32 °F) [...]
2019-05-08meta-author