Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.
III-V Nitride Deposition
GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on up to SiC substrate or sapphire substrate.
For PAM-XIAMEN Gallium Nitride Epitaxy on Sapphire Templates,please review:
For Gallium Nitride Epitaxy on SiC Templates,which are used to fabrication of blue light emitting diodes and and nearly solar blind UV photodetectors
SiC based devices are:
low lattice mismatch forIII-nitride epitaxial layers
high thermal conductivity
monitoring of combustion processes
all sorts of UV-detection
Due to SiC material properties, SiC-based electronics and devices can work in very hostile environment,which can work under high temperature, high power and high radiation conditions
High Power Devices
Due to SiC’s properties:
High electrical breakdown field(4H-SiC: 2-4*108 V/m, 6H-SiC: 2-4*108 V/m )
High saturation drift velocity(4H-SiC:2.0*105 m/s, 6H-SiC:2.0*105 m/s)
High thermal conductivity(4H-SiC: 490 W/mK, 6H-SiC: 490 W/mK )
Which are used for fabrication of very high-voltage, high-power devices such as diodes, power transitors, and high power microwave devices.Compared to conventional Si-devices SiC-based power device offers:
faster switching speed
lower parasitic resistances
less cooling required due to high-temperature capability
SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher thermal conductivity combined with wide bandgap and high critical field give SiC semiconductors an advantage when high power is a key desirable device feature.
Currently silicon carbide (SiC) is widely used for high power MMIC
applications. SiC is also used as a substrate for epitaxial
growth of GaN for even higher power MMIC devices
High Temperature Devices
Due to SiC high thermal conductivity,SiC will conductor heat rapidly than other semiconductor materials.
which enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated
High Frequency Power Devices
SiC-based microwave electronics are used for wireless communications and radar
For detail application of SiC substrate, you can read Detail Application of Silicon Carbide .
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SiC Wafer Substrate
The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
Ge(Germanium) Single Crystals and WafersPAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.
SiC Wafer Reclaim
PAM-XIAMEN is able to offer the following SiC reclaim wafer services.
PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.
Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.
SiC EpitaxyWe provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect