SiC Epitaxy

We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect
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Product Description

SiC(Silicon Carbide) Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar

1.Specification of SiC epitaxy:

Items Specification Typical Value
Poly-type 4H
Off-orientation toward 4 deg-off
<11 2_ 0>
Conductivity n-type
Dopant Nitrogen
Carrier Concentration 5E15-2E18 cm-3
Tolerance ± 25% ± 15%
Uniformity 2”(50.8mm)< 10% 7%
3”(76.2mm)< 20% 10%
4” (100mm)< 20% 15%
Thickness Range 5-15 μm
Tolerance ± 10% ± 5%
Uniformity 2”< 5% 2%
3”< 7% 3%
4”< 10% 5%
Large Point Defects 2”< 30 2”< 15
3”< 60 3”< 30
4”< 90 4”< 45
Epi Defects ≤20 cm-2 ≤10 cm-2
Step Bunching ≤2.0nm (Rq) ≤1.0nm (Rq)
(Roughness)

 

2 mm edge exclusion for 50.8 and 76.2 mm, 3 mm edge exclusion for 100.0 mmNotes:

• Average of all measurement points for thickness and carrier concentration (see pg. 5)
• N-type epi layers <20 microns are preceeded by n-type, 1E18, 0.5 micron buffer layer
• Not all doping densities are available in all thicknesses
• Uniformity:standard deviation(σ)/average
• Any special requirement on the epi-parameter is on request

2.Test Methods

No.1. Carrier concentration:Net doping is determined as an average value across the afer using Hg probe CV.
No.2. Thickness: Thickness is determined as an average value across the wafer using FTIR.
No.3.Large point defects: Microscopic inspection performed at 100X, on an Olympus Optical Microscope, or comparable.
No.4. Epi Defects Inspection or defect map performed under KLA-Tencor Candela CS20 Optical Surface Analyzer or SICA.
No.5. Step bunching: Step bunching and Roughness are scaned by AFM (atomic force microscope) on a 10μm x10μm area

2-1:Large Point Defects Descriptions

Defects which exhibit a clear shape to the unassisted eye and are > 50microns across. These features include spikes, adherent particles, chips andcraters. Large point defects less than 3 mm apart count as one defect.

2-2:Epitaxy Defect Descriptions

D1. 3C Inclusions
Regions where step-ow was interrupted during epi layer growth. Typicalregions are generally triangular although more rounded shapes are sometimesseen. Count once per occurrence. Two inclusions within 200 microns count asone

D2. Comet Tails
Comet tails have a discrete head and trailing tail. These features are alignedparallel to the major at. Usually, all comet tails tend to be of the same length. Count once per occurrence. Two comet tails within 200 microns count as one.

D3. Carrots
Similar to comet tails in appearance except they are more angular and lack adiscrete head. If present, these features are aligned parallel to the major at. Usually, any carrots present tend to be of the same length. Count once peroccurrence. Two carrots within 200 microns count as one.

D4. Particles
Particles have the appearance of eyes and if present are usually concentratedat the wafer edges and not within the specied area. If present, count once peroccurrence. Two particles within 200 microns count as one..

D5. Silicon droplets
Silicon droplets can appear as either small mounds or depressions in the wafersurface. Normally absent, but if present are largely concentrated at perimeterof wafer. If present, estimate the % of specied area affected.

D6. Downfall
Adherent particles droped during Epi growth.

3. Application of SiC epitaxial wafer

Power factor correction(PFC)
PV inverter and UPS(Uninterrupted power supplies) inverters
Motor drives
Output rectification
Hybrid or electric vehicles
SiC Schottky diode with 600V, 650V, 1200V, 1700V, 3300V is available.

Please see below detail application by field:

Field Radio Frequency(RF) Power Device LED 
Material SiLDMOS Si GaN/Al2O3
GaAs GaN/Si GaN/Si
GaN/SiC SiC/SiC GaN/SiC
GaN/Si Ga203 /
Device SiC based GaN HEMT SiC based MOSFET  
SiC based BJT
SiC based IGBT
SiC based SBD
/
Application Radar, 5G Electric vehicles Solid State Lighting

 

4. Mechanical wafers with Epi layes: are available, such as for process monitoring, which require wafers with low bow and warpage.

150mm 4H n-type SiC EPI wafers

Instrinsic SiC Epilayer on Silicon carbide substrate

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