Silicon Ingots -1

Silicon Ingots -1

Silicon Ingots -1

PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!

 

 

 

All diameters!

Note: Material – CZ unless noted
Kg inProperties of Silicon
Stock
Silicon Ingots
Material Description
2.7FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats
1.15FZ 6″Ø×25mm ground ingot, n-type Si:P[100], (7,025-7,865)Ohmcm, MCC Lifetime=7,562µs, 1 SEMI Flat
1.6FZ 6″Ø×27mm ground ingot n-type Si:P[100], (7,503-7,875)Ohmcm, 1Flat
3.8FZ 6″Ø×80mm ingot, n-type Si:P[100] ±2°, (57-62)Ohmcm, 1 SEMI Flat, MCC Lifetime=15,799µs
4.53FZ 6″Ø×101mm ground ingot, n-type Si:P[100], (0.350-0.353)Ohmcm, NO Flats
2.4FZ 6″Ø×52mm ground ingot, n-type Si:P[100], (23.86-25.05)Ohmcm, MCC Lifetime=16,352µs, NO Flats
5.34FZ 6″Ø×124mm n-type Si:P[100], (0.556-0.600)Ohmcm, Ground, NO Flats
10.68FZ 6″Ø×248mm ground ingot, n-type Si:P[100], (0.557-0.565)Ohmcm, NO Flats
11.91FZ 6″Ø×275mm ground ingot, n-type Si:P[100], (0.307-0.313)Ohmcm, NO Flats
1.7FZ 6″Ø ingot n-type Si:P[100], Ro: 6,285-10,516 Ohmcm, MCC Lifetime>6000μs, As-Grown, (1 ingot: 37.8mm) NO Flats
2.5FZ 6″Ø×53mm ground ingot, n-type Si:P[100], Ro=~2.7 Ohmcm, MCC Lifetime=7,903µs, NO Flats
3.05FZ 6″Ø ingot n-type Si:P[100], Ro: 6,218-10,002 Ohmcm, (1 ingot: 70mm) NO Flats
10.11FZ 6″Ø×236mm ground ingot, n-type Si:P[100], (25.70-26.29)Ohmcm, Lifetime=2,218us, NO Flats
6.49FZ 6″Ø×206mm ground ingot, n-type Si:P[100], (4.65-5.11)Ohmcm, MCC Lifetime=2,225µs, NO Flats
1.4FZ 6″Ø×34mm ground ingot, n-type Si:P[111], Ro>4,800 Ohmcm, T>1,000μs, 1 JEIDA Flat (47.5mm)
11.88FZ 6″Ø ingot Intrinsic Si:-[100] ±2.0°, Ro: >10,000 Ohmcm, NO Flats
5.5FZ 5″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,879-3,258 Ohmcm, As-Grown, (1 ingot: 172mm) SEMI, 1Flat
1.7FZ 5″Ø×59mm ground ingot, n-type Si:P[111], (5,400-7,200)Ohmcm, MCC Lifetime>1,200µs, 1 SEMI Flat
3.36FZ 5″Ø ingot n-type Si:P[111] ±2°, Ro: 70-110 Ohmcm, Ground, (1 ingot: 115mm) SEMI, 1Flat
0.3FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs, 1 SEMI Flat
1.06FZ 4″Ø×55mm p-type Si:B[100], (1,000-2,000)Ohmcm, MCC Lifetime>700µs, 1 SEMI Flat
0.96FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 2,600-3,800 Ohmcm, (1 ingot: 99mm) NO Flats
4.04FZ 4″Ø×210mm p-type Si:B[100] (500-1,000)Ohmcm, MCC Lifetime=700µs, Ground, NO Flats
1.78FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 133-155 Ohmcm, MCC Lifetime>7400μs, Ground, (1 ingot: 169mm) NO Flats
2.79FZ 4″Ø×143mm ingot p-type Si:B[100]±2°, Ro=2,100 Ohmcm {actual=(1,953-2,265)}, NO Flats
2.43FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 16,000-19,000 Ohmcm, (1 ingot: 125mm) NO Flats
1.94FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 1,900-3,600 Ohmcm, (1 ingot: 100mm) NO Flats
5.3FZ 4″Ø×320mm ingot p-type Si:B[100], (1.0-1.1)Ohmcm, MCC Lifetime=1,511µs, NO Flats
4.66FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, As-Grown, (1 ingot: 250mm) 1Flat
4.66FZ 4″Ø ingot p-type Si:B[111] ±0.5°, Ro: 8,220-12,252 Ohmcm, (1 ingot: 237mm) NO Flats
0.74FZ 4″Ø×38mm ground ingot, n-type Si:P[100] (0.8-2.5) {0.91-2.29}Ohmcm, Lifetime >300µs, Ox<1E16/cc, C<1E16/cc, NO Flats
1.49FZ 4″Ø×73mm, ingot n-type Si:P[100] ±2.0°, (198-200)Ohmcm, Lifetime=12,904µs, NO Flats
0.7FZ 4″Ø×40mm ground ingot, n-type Si:P[100] Ro>5,000Ohmcm {4,980-6,370}, Lifetime>980µs, NO Flats
0.99FZ 4″Ø ingot n-type Si:P[100], Ro: 402-434 Ohmcm, NO Flats
1.33FZ 4″Ø ingot n-type Si:P[100], Ro: 2,886-3,624 Ohmcm, (1 ingot: 129mm) NO Flats
3.89FZ 4″Ø ingot n-type Si:P[100] ±2°, Ro: 1-2 Ohmcm, MCC Lifetime>300μs, (2 ingots: 50mm, 158mm) SEMI, 1Flat
4.87FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs, NO Flats
2.07FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm, NO Flats
5.7FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs, NO Flats
1.02FZ 4″Ø ingot n-type Si:P[551] ±2°, Ro:>4,800Ohmcm, Ground, SEMI, 1Flat (47.5mm), T>1,000μs
0.6FZ 4″Ø ingot n-type Si:P[111] ±2°, Ro: 6,100-7,800 Ohmcm, MCC Lifetime>1300μs, (1 ingot: 38mm) NO Flats
10FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground, NO Flats
5.78FZ 4″Ø ingot Intrinsic Si:-[111] ±0.5°, Ro: >20,000 Ohmcm, Ground, (3 ingots: 126mm, 106mm, 81mm) NO Flats
0.86FZ 3″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 {1.29-1.32} Ohmcm, MCC Lifetime>1777μs, (2 ingots: 21mm, 54mm) NO Flats
4.05FZ Ingot 3″Ø×(112+265)mm, p-type Si:B[111] ±2°, (1,800-3,000)Ohmcm, Lifetime>1,000μs, SEMI, NO Flats
1FZ 3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1,000-2,000 Ohmcm, Ground, NO Flats
0.55FZ 3″Ø×102mm ingot p-type Si:B[111] ±2°, (4,400-4,600)Ohmcm, Ground, SEMI, 1Flat
4.4FZ 3″Ø×(129+131+147)mm ground ingot, n-type Si:P[100] ±2°, (40-60)Ohmcm, NO Flats
2.5FZ 3″Ø×(117+135)mm ground ingot, n-type Si:P[100] ±2°, Ro>5,000 Ohmcm, MCC Lifetime>1,000µs, NO Flats
4.63FZ 3″Ø ingot n-type Si:P[111] ±2.0°, Ro: 5,750-6,850 Ohmcm, MCC Lifetime>6,000μs, As-Grown, (2 ingots: 250mm, 239mm) NO Flats
5.18FZ NTD 3″Ø×(197+277)mm ground ingot, n-type Si:P[111], (50-60)Ohmcm, MCC Lifetime>400μs, Ox<1E16/cc, C<1E16/cc, RRV<10%, 1 SEMI Flat
1FZ 3″Øx90mm ground ingot, n-type Si:P[111], (2,000-6,000)Ohmcm, MCC Lifetime>2,000μs, Ox<1E16/cc, C<1E16/cc, RRV<35%, 1 SEMI Flat
2FZ 3″Ø×188mm ground ingot, n-type Si:P[111] ±0.5°, Ro:>2,000 {2.330-3,300}Ohmcm, MCC Lifetime>1,640µs, NO Flats
4.24FZ 3″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >20,000 Ohmcm, NO Flats
2.29FZ 3″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >17,500 Ohmcm, NO Flats
4.49FZ 2″Ø×(132+124+124+123+115+107+100+99)mm ingots, p-type Si:B[100] ±2°, (1,000-3,000)Ohmcm, 1 SEMI Flat
0.32FZ 2″Ø×64.5mm ingot p-type Si:B[100]±2º, (2,879-3,258)Ohmcm, NO Flats
4.3FZ 2″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 {1.29-1.32} Ohmcm, MCC Lifetime>1777μs, (2 ingots: 58mm, 84mm) NO Flats
0.16FZ 2″Ø×38mm ingot, p-type Si:B[100]±2º, Ro:~2,900Ohmcm, 1 SEMI Flat, made by SPC
8.32FZ 2″Ø×(392+342+304+263+250+175)mm ingots, p-type Si:B[111]±2º, (2,000-5,000)Ohmcm, 1 SEMI Flat
0.4FZ 2″Ø ingot n-type Si:P[100] ±2°, Ro: ~2.7 Ohmcm, MCC Lifetime>7903μs, Ground, (2 ingots: 38mm, 39mm)
2.97FZ 2″Ø×(100+87+86+85+85+84)mm ingots, n-type Si:P[111], (2,000-4,000) {2,166-3,835} Ohmcm, NO Flats
0.55FZ 2″Ø×26mm ground ingot, n-type Si:P[111]±2º, (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs, NO Flats
1.29FZ 2″Ø×(97+64+56+48)mm ingots, Intrinsic Si:-[100]±2º, Ro>10,000 Ohmcm, NO Flats
2.41FZ 2″Ø×(128+81+80+79+75+71+71+71+71)mm ingots, Intrinsic Si:-[100], Ro>20,000 Ohmcm, NO Flats
1.21FZ 2″Ø×(160+98)mm ingots, Intrinsic Si:-[111]±2º, Ro>12,000 Ohmcm, NO Flats
0.5FZ 1″Ø ingot p-type Si:B[100] ±2°, Ro:1-3 Ohmcm, (5 ingots: 76mm, 80mm, 80mm, 82mm, 82mm) NO Flats, Lifetime=300µs
0.1FZ SCRAP, Improperly cored 1″Ø ingot p-type Si:B[100] ±2°, Ro:1-3Ohmcm, (1 ingot: 81mm) Improper flat running for 70% of the length of the ingot
0.24FZ 1″Ø ingot p-type Si:B[100] ±2°, Ro:3,400-4,100Ohmcm, Ground, (3 ingots: 75mm, 76mm, 77mm) SEMI, 1Flat
1FZ 1″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,879-3,258 Ohmcm, (1 ingot: 31mm, 0.05Kg, $200 for the piece) NO Flats
0.25FZ 1″Ø(37+37+38+38)mm ground ingot, n-type Si:P[100]±2°, Ro: ~2.7 Ohmcm, MCC Lifetime>7,000μs
0.86FZ 1Ø×60mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm, NO Flats
0.9FZ Silicon Ingot, 48mmØx217mm, n-type Si:P[111], Ro=~300 Ohmcm, (p-type Ro>3,000 Ohmcm), NO Flats
2FZ 1″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, NO Flats
2FZ 1″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >17,500 Ohmcm, NO Flats
1FZ 6.35mmØ ingot Intrinsic Si:-[111], Ro: >10,000 Ohmcm, (1 lot of 8 rods, each 51mm long)
1FZ 6.35mmØ ingot Intrinsic Si:-[111], Ro: >10,000 Ohmcm, (1 lot of 11 rods, each ranging from 15mm to 49mm long)
10FZ 0.5″Ø×110mm ingot, n-type Si:P[100], Ro: 5,497-10,293 Ohmcm, MCC Lifetime>6,500µs. 10 pieces, each piece is 0.5″Ø, 0.029Kg and 100mm long.
6.8FZ SCRAP material p-type, Ro: 1-1,000 Ohmcm
2.24FZ SCRAP material p-type, Ro: 1,000-10,000 Ohmcm
6.78FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

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