PAM-XIAMEN can supply SiC substrates with various specifications, please get more info from: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html
1. Significance of Research on Correlation Between Defect Rate and Mechanical Strength
It is well known that SiC defects have great negative impact to the electrical reliability and performance of chips; Their [...]
2024-04-01meta-author
PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation.
1. SPECT, γ-imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
25.4×25.4mm2
Thickness
5.0mm
Pixel size
1.5×1.5mm2
Pixel pitch
1.6mm
Pixel array
16×16
Electrode material
Au
Operation temperature
+30℃~+40℃
Energy range
20KeV~700MeV
Energy resolution(22℃)
Average<6.5%@122KeV(>13% means defective pixel)
Photo-Peak Efficiency(PPE)
Defined [...]
2019-04-24meta-author
PAM XIAMEN offers 3″FZ Prime Silicon Wafer Thickness: 350±15um.
3″ Si epi-ready wafer
Si wafer
FZ
Diameter: 76mm
Thickness: 350±15um
Dopant: P
Orientation: (100)
Resistivity: 500-1000 Ohm*cm
Double side polished, epi-ready
laser mark with numbering from N1k- 001 to NN1k- 200 for alll 200pcs [...]
2019-07-03meta-author
PAM XIAMEN offers Conductive Ceramic Substrates.
8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground
8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished
Conductive Ceramic Target (1″ Dx 0.3 mm t )
Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
2019-04-18meta-author
PAM XIAMEN offers LaF3 crystal.
Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Growth
Max. Xtl Size
Trigonal
a=b= 7.190 c=7.367 a=b=90o, g=120o
1493
5.936
4.5
Bridgman
20dx 100mm
LaF3 (100)ori. 9x9x0.5mm 1sp
LaF3 (100)ori. 10x10x0.5mm 1SP
LaF3 (100)ori. 7x7x0.5mm 2sp
LaF3 6.35 mm Dia. x 1.575mm ,fine ground
LaF3 (110)ori. 6 mm Dia. x 0.5mm 1sp
LaF3 (100)ori. 10 mm Dia. [...]
2019-05-07meta-author
PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author