PAM XIAMEN offers ITO coated(sodalime) glass.
ITO Physical properties
Melting point
1800–2200 K (1526-1926 °C) (2800–3500 °F)
Density
7120–7160 kg/m3 at 293 K
Color (in powder form)
Pale yellow to greenish yellow, depending on SnO2 concentration
Values vary with composition. SI units and STP are used except where noted.
ITO Coated Glass, 10mmx10mmx 0.7mm
ITO Coated Glass Substrate 10mm x 10 mm x [...]
2019-04-28meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-6
N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author
Effects of sample processing on the performance of CdZnTe crystals
Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal [...]
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-8
4″ GDFZ Si wafer
N type, As doped
Orientation (100)
Thickness 250±25μm,
Resistivity 0.001-0.005Ωcm
DSP
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with [...]
2019-10-25meta-author
PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γ camera and SPECT.
Direct splice: The module has a [...]
2019-04-24meta-author
Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]