SiC devices are made from silicon carbide(SiC) wafers. So, here comes a question: how to obtain a silicon carbide wafer? Generally, a SiC wafer is cut from cylindrical SiC boules. As for the cutting process, methods for cutting silicon carbide ingots are introduced here.
A diamond [...]
2021-04-27meta-author
PAM XIAMEN offers Single crystal KTaO3.
KTaO3 (100) 5x5x0.5 mm, 2sp
KTaO3, (100), 10 x 5 x 0.5mm, 1sp
KTaO3, (100), 10 x 5 x 0.5mm, 2sp
KTaO3, (100), 5 x 5 x 0.5mm, 1sp
KTaO3, (110), 5 x 5 x 0.5mm, 1sp
KTaO3, [...]
2019-05-07meta-author
Chamfer is to grind away the sharp edges and corners around the wafer. Its purpose is to make the mechanical strength of the wafer bigger prevent the wafer edge from cracking, to prevent damage caused by thermal stress, and to increase the flatness of [...]
2022-06-10meta-author
The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
2020-01-20meta-author
Hyung Koun Cho∗
Department of Metallurgical Engineering, Dong-A University, Busan 604-714
Jeong Yong Lee
Department of Materials Science and Engineering,
Korea Advanced Institute of Science and Technology, Daejon 305-701
We have investigated the formation of V-shaped pits in nitride films such as InGaN/GaN and AlGaN/GaN grown on sapphire substrate [...]
2021-12-22meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2841
Intrinsic Si:-
[100]
4″
300
P/E
FZ 16,000-20,000
SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
PAM2842
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, 1Flat, Empak cst, TTV<5μm, [...]
2019-02-22meta-author