Single-emitter LD Chip 808nm @10W
PAM200914-LD-CHIP-808nm
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm
Operation
Symbol
Min.
Typ.
Max.
Unit
Center wavelength
λ
—
808
—
nm
Output powe
P。
—
10.5
—
w
Operation mode
—
—
CW
—
—
Geometrical
Emitter width
w
—
190
—
μm
Cavity length
L
—
4000
—
μm
Chip width
W
—
500
—
μm
Chip height
H
—
150
—
μm
Electro Optical Data
Threshold curen
Ith
—
1.6
—
A
Operating current
Iop
—
10
—
A
Operating voltage
Vop
—
1.8
—
V
Slope efficiency
ηd=PJ(lop-Ith)
—
1.2
—
WIA
Total conversion efficiency
η=Po/(lopxVop)
—
58
—
%
Slow axis divergence
θn”
—
10
—
degrees
Fast axis divergence
θ1
—
35
—
degrees
Spectral width
△λ
—
3
—
nm
Polarization
—
—
TE
—
—
For more information, please contact us email [...]
2019-05-09meta-author
PAM-XIAMEN offers high-quality AlN on silicon and sapphire wafer, which is AlN epitaxial thin film grown on single crystal sapphire/Si substrate, that way can provide the most cost-effective solution to grow high quality III-V nitride thin film.
1. Wafer List:
Undoped AlN Template on Sapphire, [...]
2019-04-16meta-author
PAM XIAMEN offers Ce:YAG substrate.
Ce:YAG substrate (111) 5 x 5 x 0.5 mm, 2sp
Substrate Specifications
Crystal: Ce: YAG ( 0.2% wt Ce doped)
Size: 5 x 5 x 0.5mm +/-0.05mm
Orientation: (111) +/-0.5 0
Polish: two sides optical polished.
Pack: Packed in 1000 class plastic [...]
2019-04-18meta-author
PAM XIAMEN offers 6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ
Silicon ingot, per SEMI, G 150.7±0.3mmØ
FZ p-type Si:B[110]±2.0°
Ro > 1,000 Ohmcm
Ground Ingot
NO Flats
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc
MCC Lifetime>1,000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
675
P/E
1-100
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
800
E/E
1-50
SEMI, 1Flat (57.5mm), TTV<5μm
p-type Si:B
[100]
6″
320
P/E
0.001-0.030
JEIDA Prime
p-type Si:B
[100]
6″
675
P/P
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
675
P/E
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[111-4.0°] ±0.5°
6″
625
P/E
4-15 {7.1-8.8}
SEMI Prime, 1 JEIDA Flat(47.5mm)
p-type Si:B
[111] ±0.5°
6″
675
E/E
0.010-0.025
SEMI, 1Flat (57.5mm)
n-type Si:P
[100]
6″
925 ±15
E/E
5-35 {12.5-29.7}
JEIDA Prime, TTV<5μm
n-type Si:P
[100]
6″
675
P/E
2.7-4.0
SEMI Prime
n-type Si:P
[100]
6″
250 ±5
P/P
1-3
SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers InP Wafer. Detailed wafer information, please refer to below:
1. InP Wafer Specifications
InP(100)
InP (100) Sn-doped
InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp
InP (100)undoped
InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp
VGF InP (100) undoped, 2″ x 0.35 [...]
2019-05-06meta-author