AlN Single Crystal Substrate& Template on Sapphire/Silicon

AlN Single Crystal Substrate& Template on Sapphire/Silicon

PAM XIAMEN offers high-quality AlN(aluminum nitride) template on sapphire and silicon substrate, which is AlN epitaxial thin film grown on single crystal sapphire/Si substrate, that way can provide the most cost-effective solution to grow high quality III-V nitride thin film.

1.Wafer List:

Undoped AlN Template on Sapphire, 2″, AlN layer1um or 3~5um – single side polished or double side polished
Undoped AlN Template on Silicon, 2″, AlN layer1um – single side polished
Undoped AlN Template on Sapphire, 4″, AlN layer1um – single side polished or double side polished
Undoped AlN Template on Silicon, 4″, AlN layer1um – single side polished PAM190813-ALN

2″ 25nm AlN on (111) Si
6″ 25nm AlN on (111) Si
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm

Remark:

There are two ways to make AlN on silicon, one way is to grow them by MOCVD, another way is to coat them, but anyway, the thickness is around 200nm, if too thick, the BOW would be big.
Question: How to choose silicon substrate when growing AlN film?
Answer: choose silicon at (111)orientation, also the resistivity should be higher.

2.Specification of 2”size AlN on Sapphire:

Item PAM-AlNT-S
Diameter Dia.50.8mm ± 1mm
Conduction Type Semi-insulating
   
Thickness: 1um, 3~5um
Substrate: Sapphire
Orientation : C-axis(0001)+/-1°
Orientation Flat A-plane
XRD FWHM of (0002) <200 arcsec.
Surface Roughness <2nm
Useable Surface Area ≥90%
 Polish Condition Single side polished or double side polished.
Package Single wafer container, under a nitrogen atmosphere, in a class 100 clean room environment.

3.Specification of 4”size AlN on Sapphire:

Item PAM-AlNT-S  190822
Diameter Dia.100mm ± 1mm
Conduction Type Semi-insulating
   
Thickness: 1um
Substrate: Sapphire
Orientation : C-axis(0001)+/-1°
Orientation Flat A-plane
XRD FWHM of (0002) <200 arcsec.
Surface Roughness <2nm
Useable Surface Area ≥90%
 Polish Condition Single side polished or double side polished.
Package Single wafer container, under a nitrogen atmosphere, in a class 100 clean room environment.

4.Specification of AlN on Silicon by coating:

4-1 2″ 25nm AlN on (111) Si
4-2 6″ 25nm AlN on (111) Si
4-3 Undoped AlN Template on 2″ Silicon ( Si <111> N type ) 2″x 500 nm
4-4 Detail Specification
AlN Template on Silicon
Nominal AlN thickness: 500nm ±10%, one side coated, undoped AlN film
Back surface: silicon N-type
AlN orientation: C-plane (0001)
Wafer base: Silicon [111] N type, 2″ dia x 0.5 mm, one side polished
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm

For more information, send us email at victorchan@powerwaywafer.com

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