AlN Single Crystal Substrate& Template on Sapphire/Silicon

AlN Single Crystal Substrate& Template on Sapphire/Silicon

PAM-XIAMEN offers high-quality AlN on sapphire and silicon wafer, which is AlN epitaxial thin film grown on single crystal sapphire/Si substrate, that way can provide the most cost-effective solution to grow high quality III-V nitride thin film.

AlN on sapphire / silicon

1. Wafer List:

Undoped AlN Template on Sapphire, 2″, AlN layer1um or 3~5um – single side polished or double side polished
Undoped AlN Template on Silicon, 2″, AlN layer1um – single side polished
Undoped AlN Template on Sapphire, 4″, AlN layer200um – single side polished or double side polished
Undoped AlN Template on Silicon, 4″, AlN layer1um – single side polished PAM190813-ALN

2″ 25nm AlN on (111) Si
6″ 25nm AlN on (111) Si
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm

Remark:

There are two ways to make AlN templates on silicon, one way is to grow them by MOCVD, another way is to coat them, but anyway, the thickness is around 200nm, if too thick, the BOW would be big.
Question: How to choose silicon substrate when growing AlN film?
Answer: choose silicon at (111)orientation, also the resistivity should be higher.

2. Specification of 2”size AlN on Sapphire

Item PAM-AlNT-S
Diameter Dia.50.8mm ± 1mm
Conduction Type Semi-insulating
   
Thickness: 1um, 3~5um
Substrate: Sapphire
Orientation : C-axis(0001)+/-1°
Orientation Flat A-plane
XRD FWHM of (0002) <200 arcsec.
Surface Roughness <2nm
Useable Surface Area ≥90%
Polish Condition Single side polished or double side polished.
Package Single wafer container, under a nitrogen atmosphere, in a class 100 clean room environment.

3. Specification of 4”size AlN on Sapphire

Item PAM210407-G-SA
Diameter Dia.100mm ± 1mm
Conduction Type Semi-insulating
   
Thickness: 200um
Substrate: Sapphire
Orientation : C-axis(0001)+/-1°
Orientation Flat A-plane
XRD FWHM of (0002) <400 arcsec.
Surface Roughness <2nm
Useable Surface Area ≥90%
Polish Condition Single side polished or double side polished.
Package Single wafer container, under a nitrogen atmosphere, in a class 100 clean room environment.

4. Specification of AlN on Silicon Wafer

4.1 Aluminum Nitride Wafer on Silicon Substrate by Growth (PAM210712-ALN)

Item: PAM-AlN-100-SI                           

Dimension:100.0±0.2mm                   

Conduction Type:Semi-Insulating   

Thickness:100-200nm                          

AlN Orientation: C plane(0001)                            

(0002) FWHM (arcsec)<=1050                                   

Substrate: Silicon substrate,(100), 500+/-25um

Crack: None                       

Surface roughness:(5x5um) Ra < 1nm

Single side polished(SSP)                           

TTV<7um

Warp<30um

Bow<15um

Package: Each wafer in wafer container, packed in a 100 cleanroom.

4.2 AlN on Silicon Wafer by Coating

4-1 2″ 25nm AlN on (111) Si
4-2 6″ 25nm AlN on (111) Si
4-3 Undoped AlN Template on 2″ Silicon ( Si <111> N type ) 2″x 500 nm
4-4 Detail Specification
AlN Template on Silicon
Nominal AlN thickness: 500nm ±10%, one side coated, undoped AlN film
Back surface: silicon N-type
AlN orientation: C-plane (0001)
Wafer base: Silicon [111] N type, 2″ dia x 0.5 mm, one side polished
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm

powerwaywafer

For more information, please contact us email at [email protected] and [email protected].

Share this post