PAM-XIAMEN offers (20-2-1) Plane Semi-insulating Freestanding GaN Substrate, which is semiconductor material for the development of iii-nitride device, microelectronic devices and optoelectronic devices. The following specification of free standing GaN crystal substrate is for sale.
1. Semi-insulating Freestanding GaN Substrate Specification
Item
PAM-FS-GAN(20-2-1)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front [...]
2020-09-02meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaP and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are [...]
2017-10-17meta-author
PAM XIAMEN offers Single crystal YVO4.
YVO4 is an excellent birefringent crystal for fiber optics applications. As substrate, it can replace TiO2 for lower cost and better quality in many cases
Crystal
Birefr-ingence D=he-ho
Refractive index h atl= 0.63m
Thermooptical Coef.dh/dT106/K
Structure lattice constant (A)
Melting point oC
Density g/cm3
Hard-ness (Moh)
Thermal Coef. 10-6/K
YVO4
0.222
ho=1.9929
he=2.2154
a: [...]
2019-05-21meta-author
PAM XIAMEN offers Thermal Oxide. If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Physical Constants
Constant Name
Value
Density (g/cm3)
2.27
Dielectric Constant
3.9
DC Resistivity @25°C (Ω-cm)
1016
Energy gap (eV)
~9
Thermal conductivity (W/cm2°C)
0.014
Linear expansion coefficient (ppm/°C)
0.05
Refractive index
1.46
Melting Point (°C)
~1700
Molecular weight
60.08
Molecules/cm3
2.3*1022
Specific [...]
2019-02-26meta-author
Undoped InP Wafer
PAM-XIAMEN offer low doped InP wafer substrate, see the following:
InP wafer,2” (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – 16.0±1.0 mm;
[...]
2020-03-18meta-author
PAM-PA04 series detectors are high density pixel array detector based on CZT crystal. they can counting high-dose X-ray and imaging.
1. CZT High-Density Pixel Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
>10.0×10.0mm2
Thickness
>0.7mm
Pixel size
<70um
Single Pixel leakage current
<0.01nA@100V
The maximum counting rate of linear region
>100Mcps/mm2
Electrode material
Au
Operation temperature
20℃~40℃
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Details
2. Features of CZT Pixel Detector [...]
2019-04-24meta-author