PAM XIAMEN offers high-quality BaF2 crystal substrate.
BaF2 is an excellent Infrared crystal and Scintillating crystal. PAM XIAMEN supplies BaF2 crystal substrate, window and blank for all IR applications.
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Cubic
6.196
1354 oC
4.88
3 (mohs)
18.1×10-6 / oC)
ho 1.47443
BaF2, (100), 10x10x 0.5 mm, 2 sides polished
BaF2, (100), 10x10x 1.0 mm, [...]
2019-04-16meta-author
The Silicon crystal orientations that we often hear are <100>, <110> and <111>(shown as Fig. 1), respectively indicating a crystallographic family. The single crystal silicon structure belongs to cubic crystals, and the <100> crystal orientation family represents six crystal orientations: [100], [010], [001], [100], [0-10], and [...]
2024-02-23meta-author
From the perspective of the cross-sectional structure of integrated circuits, most integrated circuits are fabricated on the shallow surface layer of the silicon base material. Due to the requirements of the manufacturing process, high requirements are placed on the dimensional accuracy, geometric accuracy, surface [...]
2022-06-13meta-author
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique
A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of [...]
As the basis for making photovoltaic cells and integrated circuits, silicon wafer cleaning is very important. The effect of cleaning directly affects the final performance, efficiency and stability of photovoltaic cells and integrated circuits. Cleaning the silicon wafer not only removes impurities on the [...]
2022-06-24meta-author