PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author
PAM XIAMEN offers 2″ FZ Intrinsic Silicon Wafer
Silicon, 2″ Intrinsic
Orientation <100>,
Resistivity >10,000Ωcm,
Thickness 280±10um, DSP,
TTV<5um, Bow/Warp<30um,
2 SEMI Flats, Prime Grade,
Particle @0.3µm, <20 count
Good surface quality for Thermal Oxide growth
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM-XIAMEN offers CZT Preamplifier.
PAMMA-01A is a single channel CZT preamplifier. It featured low noise, high gain and charge sensitivity. Signals of semiconductor detectors and other detectors (scintillator, gas, etc.) could be readout by it. Charge sensitive pre-amplifier can be used to test the energy [...]
2020-12-10meta-author
PAM XIAMEN offers Zero Diffraction Si Wafer Diameter 32mm for XRD measurements
Zero Diffraction Plate 32 mm Dia. x Thickness 2.0 mm
Si Crystal for XRD sample with below specifications
Resistivity>1Ωcm
Size: 32 mm diameter x 2.0 mm thickness
Surface: double side optical polished
Zero diffraction plate is made of [...]
2020-04-23meta-author
Size and distribution of Te inclusions in detector-grade CdZnTe ingots
To observe the Te inclusions distribution along the axial direction of CdZnTe ingots, batches of as-grown detector-grade CdZnTe crystals grown by vertical Bridgman method, were investigated using IR transmission imaging. However, there is not a [...]
For single photon detection technology, in addition to the traditional InP/InGaAs SPAD, new material systems such as low noise material systems constructed from Sb based digital alloys, multi multiplication InP/InGaAs SPAD using ionization engineering, and InAlAs/InGaAs SPAD have also been developed. PAM-XIAMEN can provide InP [...]
2023-07-12meta-author