GaInP/InP epi wafer
GaInP/InP epi wafer We can offer 2″ GaInP/InP epi wafer as follows: 2” GaInP epi layer: thickness:1um, Ga:In=1:1, epi layer:1-3um, InP substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished. Gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency [...]