Tag - gan hemt wafer

Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region

Highlights •AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation. •The depletion region of structure is amended using a multiple recessed gate. •A gate structure is proposed to be able to control the thickness of the channel. •RF parameters are considered and are improved. In this paper, a high performance AlGaN/GaN [...]