Tag - inp wafer

InGaAsN epitaxially on GaAs or InP wafers

InGaAsN epitaxially on GaAs or InP wafers PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:Layer Doping Thickness (um)  RemarkGaAs  undoped ~500 <001> wafer substrateInGaAsN*   undoped 0.150 band gap <1 eVAl(0.3)Ga(0.7)As  undoped 0.5GaAs             undoped 2Al(0.3)Ga(0.7)As   undoped 0.5             ITEM x/y Doping carrier conc.(cm3) Thickness(um) wave length(um) Lattice mismatchInAs(y)P 0.25 none 5.0*10^16 1.0 –  In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600InAs(y)P 0.25 S 1.0*10^18 205.0 –  InAs(y)P 0.05->0.25 S 1.0*10^18 4.0 –  InP – S 1.0*10^18 0.3 –  Substrate:InP   S (1-3)*10^18 ~350 –  Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected]