Tag - inp wafer

InGaAsN epitaxially on GaAs or InP wafers

InGaAsN epitaxially on GaAs or InP wafers PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows: Layer Doping Thickness (um)  Remark GaAs  undoped ~500 <001> wafer substrate InGaAsN*   undoped 0.150 band gap <1 eV Al(0.3)Ga(0.7)As  undoped 0.5 GaAs             undoped 2 Al(0.3)Ga(0.7)As   undoped 0.5               ITEM x/y Doping carrier conc.(cm3) Thickness(um) wave length(um) Lattice mismatch InAs(y)P 0.25 none 5.0*10^16 1.0 –   In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600 InAs(y)P 0.25 S 1.0*10^18 205.0 –   InAs(y)P 0.05->0.25 S 1.0*10^18 4.0 –   InP – S 1.0*10^18 0.3 –   Substrate:InP   S (1-3)*10^18 ~350 –   Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.