Tag - Unintentionally Doped GaN

Resistivity Control in Unintentionally Doped GaN Films Grown on Si (111) Substrates by MOCVD

Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density (TDD) was estimated by calculating [...]