PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline).
General Properties for Molybdenum
Symbol Mo
Atomic Number 42
Atomic Weight: 95.96 g/mol
Crystal structure: BCC
Lattice constant at room temperature : 0.315 nm
Density: 10.28 g/cm3
Melting Point: 2623 °C
Boiling Point: 4639 °C
Mo Polycrystalline Substrate: [...]
2019-05-13meta-author
InP-based three-terminal electronic devices mainly include InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). PAM-XIAMEN can provide indium phosphide (InP) HEMT epi wafer, in which InGaAs use as the channel material and InAlAs as the barrier layer. The InP HEMT structure [...]
2022-07-22meta-author
PAM XIAMEN offers InSb Wafer.
InSb Ge-doped
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1
InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]
2019-05-07meta-author
Semiconductor lasers in the near-infrared band (760-1060nm) based on GaAs substrates are the most mature and most widely used, and have already been commercialized. We can supply GaAs laser diode wafer for a wavelength of 940nm. Moreover, a variety of laser wafers with different wavelengths [...]
2022-07-28meta-author
PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γ camera and SPECT.
Direct splice: The module has a [...]
2019-04-24meta-author
PAM-XIAMEN can offer LED epitaxy wafers and is able to offer GaN foundry services & supplies for LEDs. The GaN foundry services include OEM growth service, COW process and various test services. Specifically as follows:
1. OEM Service – Customized AlGaN-based Thin Film Epi Structure
We [...]
2022-11-22meta-author