GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry
SLOW RAMP-UP BUT HUGE EXPECTATIONS
The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling [...]
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, [...]
2018-08-16meta-author
PAM XIAMEN offers high-quality BaF2 crystal substrate.
BaF2 is an excellent Infrared crystal and Scintillating crystal. PAM XIAMEN supplies BaF2 crystal substrate, window and blank for all IR applications.
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Cubic
6.196
1354 oC
4.88
3 (mohs)
18.1×10-6 / oC)
ho 1.47443
BaF2, (100), 10x10x 0.5 mm, 2 sides polished
BaF2, (100), 10x10x 1.0 mm, [...]
2019-04-16meta-author
PAM XIAMEN offers GaN Template on Sapphire& Silicon.
No.1: Doped GaN Template on Sapphire
1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp
1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp
1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp
1-4Si-doped GaN [...]
2019-04-28meta-author
Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
This paper describes the bonding characteristics of 3C-SiC wafers using plasma enhanced chemical vapor deposition (PECVD) oxide and hydrofluoric acid (HF) treatment for SiC-on-insulator (SiCOI) structures and high-temperature microelectromechanical system (MEMS) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film [...]
2015-08-19meta-author