PAM XIAMEN offers 80+1mm FZ Si Ingot-4
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
PAM XIAMEN offers Nb:SrTiO3 Niobium doped Strontium Titanate Crystal and Substrates.
Nb: SrTiO3, Niobium doped Strontium Titanate Crystal and Substrates
Main Parameters
Nb:SrTiO3
A
B
C
D
Nb Concentration (wt%)
Customized
0.7
0.5
0.05
Resistivity ohm-cm
Customized
0.007
0.05
0.08
Migration rates cm2/vs
Customized
8.5
8.5
6.5
Characteristics
Nb: SrTiO3 and SrTiO3 have a similar structure, but Nb: STO has an high electrical conductivity. Typical STO are insulators
Size
10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Ф15, Ф20, Ф [...]
2019-03-14meta-author
PAM XIAMEN offers Silver Single Crystal & Substrate.
PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A surface roughness.
PAM [...]
2019-05-08meta-author
InGaAs quantum well (QW), as a commonly used two-dimensional material in near-infrared band, has important applications in semiconductor lasers, solar cells and other devices. In the field of semiconductor lasers, InGaAs/GaAs quantum well expands the luminous wavelength of GaAs (0.85~1.1 μm) and is widely [...]
2022-10-28meta-author
Aluminum nitride (AlN) is a widely used III-V group nitride with a hexagonal wurtzite structure in the field of acoustic electronic devices. It has a large direct bandgap (bandgap of 6.2 eV), is compatible with CMOS technology, and has high thermal conductivity. In addition, [...]
2024-04-03meta-author
Silicon Carbide Circuits on the Way
Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]