PAM XIAMEN offers 80+1mm FZ Si Ingot-4
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated [...]
PAM XIAMEN offers TGG (Terbium Gallium Garnet). TGG singlecrystal（ Terbium Gallium Garne ） is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm. TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping [...]
PAM XIAMEN offers GaN on Sapphire for Power. 1.1 GaN HEMT Structure on Sapphire for Power Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM ~arc.sec XRD(002)FWHM ~arc.sec Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion <2mm SiN passivation layer 0~30nm Al composition 20-30% In composition 17% for InAlN GaN cap / AlGaN/(In)AlN barrier / AlN interlayer / GaN channel / C [...]
PAM-XIAMEN can offer 780nm laser diode wafer with quantum well based on GaAs substrate. The semiconductor lasers fabricated our LD wafer are applied in the fields of military, laser cutting, laser coating, laser medical treatment, optical communication, infrared security and etc., which have the [...]
PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation. 1. SPECT, γ-imaging Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 25.4×25.4mm2 Thickness 5.0mm Pixel size 1.5×1.5mm2 Pixel center-to-center space 1.6mm Pixel array 16×16 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV!~700MeV Energy resolution(22℃) Average<6%@122KeV (>13% means defective [...]
