PAM XIAMEN offers 80+1mm FZ Si Ingot-4
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Middium and Small Size Photomask. Chromium Plate Accuracy (Standard Size:6inch Quartz) Accuracy/Grade Max Accuracy High-precision Medium accuracy General accuracy Min.Line/Space Width 0.75μm/0.75μm 3μm/3μm 5μm/5μm 10μm/10μm CD Control ±0.1μm ±0.3μm ±0.5μm ±1.0μm Total Pitch Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Registration Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Overlay Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Orthogonality ±0.5μrad ±0.75μrad ±1.0μrad ±2.0μrad Chrome Plate Material (Photomask Blank Plate) Material Soda Lime Glass、Quartz Max. Size 3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″ Normal Size 1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm Thickness 6.35±0.2mm (QZ) Film Type Low Reflectance Chrome Optical Density(λ=450nm) Between Plates3.0±0.3 In Plate±0.3 Reflectivity(λ=436nm) Between Plates10±5% In Plate±2% Main application areas: 1. IC Bumping, [...]
PAM XIAMEN offers Si+SiO2+Pt Thin Film. Si+SiO2+Pt Thin Film SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm) Silicon Wafer Specifications: Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm) Resistivity: [...]
PAM XIAMEN offers Silicon Ingots. Material Description 5″Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm 5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm 5″Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm 5″Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm 5″Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm 5″Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm 5″Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm 5″Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm 5″Ø×290mm ingot [...]
PAM-XIAMEN offers 650 RC LED Wafer. RC LED – resonant cavity light emitting diode refers to a new type of light-emitting diode structure, which can be regarded as a combination of VCSEL and LED, and have the advantages of both. Now, it is mostly [...]
Properties of InGaN blue laser diodes grown on bulk GaN substrates High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab（USA）,University of California, [...]
