PAM XIAMEN offers 80+1mm FZ Si Ingot-4
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
Dia 3 inch semi insulating GaAs substrate is available. GaAs materials are mainly divided into two categories: semi-insulating gallium arsenide material and semiconductor gallium arsenide material. Here we will discuss the semi-insulating gallium arsenide material. Semi-insulating property is a basic physical property of gallium arsenide material, and it [...]
Measurement of thickness profile and refractive index variation of a silicon wafer using the optical comb of a femtosecond pulse laser We developed a method to measure the thickness profile and refractive index variation for silicon wafers based on a spectral-domain interferometry. Through a spectral [...]
Thinking thin brings new layering and thermal abilities to the semiconductor industry This image shows a thick bulk gallium nitride (GaN) crystal wafer (2 inches in diameter) with a GaN film in the foreground fabricated by controlled spalling (its film thickness is ~20 microns or [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]
PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass). BK7 Glass BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40) BK7 (Schott) glass [...]
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 N Phos CZ -100 1-20 43768 P/P PRIME 100 N Phos CZ -100 1-20 40-60 P/P PRIME 100 N Phos CZ -100 1-20 80-100 P/P PRIME 100 N Phos CZ -100 1-20 180-200 P/P PRIME 100 N Phos CZ -100 300-350 P/P PRIME 100 N Phos CZ -100 1-20 300-350 P/E PRIME 100 N Phos CZ -100 350-400 P/P PRIME 100 N Phos CZ -100 1-3 350-400 P/P PRIME 100 N As CZ -100 .001-.005 375-425 P/P PRIME 100 N Phos CZ -100 1-20 375-425 P/E PRIME 100 N Phos CZ -100 450-500 P/P PRIME 100 N As CZ -100 .001-.005 450-500 P/P PRIME 100 N Sb CZ -100 .005-.02 450-500 P/P PRIME 100 N Phos FZ -100 >3000 450-500 P/P PRIME 100 N As CZ -100 .001-.005 500-550 P/E PRIME 100 N Sb CZ -100 .005-.02 500-550 P/E PRIME 100 N Phos FZ -100 >3000 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E/DTOx PRIME 100 N Phos CZ -100 1-20 500-550 P/E/Ni PRIME 100 N Phos CZ -100 1-20 500-550 P/E/OX PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
