PAM XIAMEN offers Middium and Small Size Photomask.
Chromium Plate Accuracy (Standard Size:6inch Quartz)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
3μm/3μm
5μm/5μm
10μm/10μm
CD Control
±0.1μm
±0.3μm
±0.5μm
±1.0μm
Total Pitch Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Registration Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Overlay Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Orthogonality
±0.5μrad
±0.75μrad
±1.0μrad
±2.0μrad
Chrome Plate Material (Photomask Blank Plate)
Material
Soda Lime Glass、Quartz
Max. Size
3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″
Normal Size
1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm
Thickness
6.35±0.2mm (QZ)
Film Type
Low Reflectance Chrome
Optical Density(λ=450nm)
Between Plates3.0±0.3 In Plate±0.3
Reflectivity(λ=436nm)
Between Plates10±5% In Plate±2%
Main application areas:
1. IC Bumping, [...]
2019-07-04meta-author
PAM XIAMEN offers Si+SiO2+Pt Thin Film.
Si+SiO2+Pt Thin Film
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
Silicon Wafer Specifications:
Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm)
Resistivity: [...]
2019-05-16meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
5″Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm
5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm
5″Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm
5″Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm
5″Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm
5″Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm
5″Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm
5″Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm
5″Ø×290mm ingot [...]
2019-03-08meta-author
PAM-XIAMEN offers 650 RC LED Wafer. RC LED – resonant cavity light emitting diode refers to a new type of light-emitting diode structure, which can be regarded as a combination of VCSEL and LED, and have the advantages of both. Now, it is mostly [...]
2019-03-13meta-author
Properties of InGaN blue laser diodes grown on bulk GaN substrates
High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab(USA),University of California, [...]
2019-10-29meta-author