PAM XIAMEN offers 4″CZ Prime Silicon wafer-15
4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-12-30meta-author
Monocrystalline silicon is widely used in microelectronic applications due to its low cost, mature manufacturing process, high carrier mobility, and long-term stability. And the growing silicon wafers applied in optoelectronic applications, such as photodetector, takes up a small portion. Monocrystalline silicon has a good [...]
2023-04-14meta-author
PAM XIAMEN offers silicon wafers that we have with a (211) orientation.
Item
Type/Dopant
Orient.
Dia.
Thick (μm)
Surf.
Res Ωcm
Comment
PAM3037
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
PAM3038
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
Prime, 1Flat, Empak cst
PAM3039
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ >50
Prime, 1Flat, Empak cst
PAM3040
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime, 1Flat, Empak [...]
2019-02-22meta-author
Most of today’s electronic products, such as computers, mobile phones, or digital tape recorders, have a very close connection with semiconductors. So, what is a semiconductor? The semiconductor definition can be illustrated from different perspectives. Firstly, let’s know what are the semiconductor materials. Please see the table of common semiconductor materials below:
Type
Group
Material
Simple substance/Element [...]
2021-05-07meta-author
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1000±25μm.
Thickness 1000±25μm
Si, 150mm dia. SSP
N type Phos or antimony
resistivity 0.01-0.2 ohm-cm
with 200A thermal OX and
1200A LPCVD nitride – stoichiometric
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-01meta-author