4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at [email protected] and [email protected]
The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]
Yellow and Green Luminescence in a Freestanding GaN Template We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV [...]
PAM XIAMEN offers MgO Magnesium Oxide Single Crystal. High quality MgO magnesium oxide crystals are used are used widely for various thin film applications. Customized MgO crystal substrates are available upon request. 1.Specification of MgO Magnesium Oxide Single Crystal Main Parameters Growth Method Special Arc Melting Crystal Structure Cubic Unit cell constant a = [...]
PAM-XIAMEN can offer 6 inch N-type GaAs wafer. Gallium arsenide is a second-generation semiconductor material with excellent performance. Gallium arsenide belongs to the second-generation semiconductors, which has far superior frequency, power and withstand voltage performance than the first-generation silicon semiconductors. According to different resistance, GaAs [...]
InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique [...]
PAM XIAMEN offers Conductive Ceramic Substrates. 8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground 8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished Conductive Ceramic Target (1″ Dx 0.3 mm t ) Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
