Silicon carbide has very stable characteristics, so that it can work stably in some harsh environments. Because of the stable chemical bonds, the technical threshold for silicon carbide production is very high. The growth conditions of silicon carbide crystal ingots are harsh, requiring high temperature (~2600℃) and high [...]
2021-04-23meta-author
PAM XIAMEN offers 3″ CZ Si Lapped Wafer
3″ CZ Si Lapped Wafer
N-type
Resistivity6-10Ωcm
Thickness180-185um
Orientation <111>
Double Side Lapped
SEMI Flat
For more information, send us email at [email protected] and [email protected]
2021-01-06meta-author
PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size:
1. Specifications of SiC Boule Crystal
No.1: 4″ SiC Boule Crystal, Production Grade
Polytype: Production- 4H
[...]
2020-05-19meta-author
Ge/SiO2 direct wafer bonding by O2-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO2 bonding was achieved after a 1500C annealing for 60 hours. The excessive O2-plasma exposure resulted in micro-crack [...]
2020-03-09meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110).
2″ Diameter Wafer
2″ wafers(110)
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm
Ge Wafer (110)N [...]
2019-04-25meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-8
Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished
For more information, send us email at [email protected] and [email protected]
2021-03-19meta-author