4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at [email protected] and [email protected]
Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detectorA CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted [...]
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm: 1. Red Infrared AlGaAs / GaAs LED Epi Wafer PAM-190723-LEDStructure Thickness, um Type Composition CC, cm-3Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018Active layer – GaAs undoped – Al0,2Ga0,8AsBarrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018(х=0,3-0,35)Stop layer 0.1 – AlхGa1-хAs –(х=0,9-1)Buffer layer – n GaAs –Substrate – n+ GaAs – 2. Where is the [...]
PAM XIAMEN offers TGG (Terbium Gallium Garnet). TGG singlecrystal（ Terbium Gallium Garne ） is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm. TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
The Gallium Nitride Era is Coming Because of the smaller form factor, better thermal performance, and higher efficiency of gallium nitride (GaN) devices, the industry has been looking forward to it for a long time. In recent years, as GaN-on-SiC devices have begun to be [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity.Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm CommentPAM2383 n–type Si:P [111] ±0.5° 4″ 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine GroundPAM2384 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafersPAM2385 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:GaN LEDs fabricated using SF6 plasma RIE Published by: Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li Department of Electrical and [...]
