4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Abstract The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
PAM XIAMEN offers Lithium Metal Foil. Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D Purity 99.9% Lithium Melting Point 180.5 °C Density 0.534 g/cm3 Color Silver Dimension “16 mm x 0.6 mm (diameter x thickness)” For more information, please visit our website: https://www.powerwaywafer.com, send [...]
This standard specifies the test method for the dislocation density of germanium single crystal. This standard method is applicable to the measurement of dislocation density of monocrystal germanium on {111), {100} and {113} planes. The test range is 0cm-2~100000cm-2. 1. Normative Document Citation for Determining [...]
PAM XIAMEN offers 6″CZ Si Wafer with low LPD Wafer Si CZ (100) Dia 6” x Thickness 675µm Type p doped B Resistivity 1-20 ohm.cm With one flat One Side Polished or Double Side Polished LPD’s < 50 @ 0.2um TTV < 25µm Bow < 60µm Warp < 60µm Absorption coefficient of DSP silicon substrate [...]
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]
GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, [...]
