PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-5
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type Si:P
[100] ±1°
3″
500
P/P
1-100
SEMI Prime, TTV<2μm, Empak cst
n-type Si:P
[100-4°] ±0.5°
3″
500
P/E
1-20
Prime
n-type Si:P
[100]
3″
650
P/P
1-10
Prime, TTV<2μm
n-type Si:P
[100]
3″
1000
P/P
1-5
SEMI Prime, hard cst
n-type Si:P
[100]
3″
1000
P/E
1-20
SEMI Prime
n-type Si:P
[100]
3″
6000
P/E
1-20
SEMI Prime, Individual cst
n-type Si:Sb
[100]
3″
300
P/E
0.02-0.04
SEMI Prime, in hard cassettes of 2 wafers
n-type Si:Sb
[100]
3″
381
P/E
0.008-0.020
SEMI Prime
n-type Si:As
[100]
3″
380
P/EOx
0.001-0.005
SEMI Prime, LTO Back-side seal [...]
2019-03-06meta-author
The Gallium Nitride Era is Coming
Because of the smaller form factor, better thermal performance, and higher efficiency of gallium nitride (GaN) devices, the industry has been looking forward to it for a long time. In recent years, as GaN-on-SiC devices have begun to be [...]
2018-08-09meta-author
PAM XIAMEN offers Silver Single Crystal & Substrate.
PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A surface roughness.
PAM [...]
2019-05-08meta-author
Highlights
•MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.
•In-depth structural characterizations showing no back-etching of ZnO.
•Chemical lift-off and wafer-bonding of the structure on float glass.
•Structural characterizations of the device on glass.
Abstract
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal [...]
InGaAs EPI on InP( Semi-insulating)
PAM XIAMEN offers InGaAs EPI on InP( Semi-insulating).
No1: InGaAs EPI on semi-insulating InP substrate:
-2″ dia. InGaAs Film on InP (SI) (100) Depositied by MOCVD, 2″ dia x0.35mm,2sp,Film:500 nm
-2″ dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( [...]
2019-04-28meta-author
Advantech Wireless releases GaN whitepaper
The company’s paper discusses gallium nitride based solid state power amplifiers for satellite communication
Advantech Wireless, a Canadian-based manufacturer of broadcast-quality Satellite, RF Equipment and Microwave Systems has released a new whitepaper titled, “A new generation of Gallium Nitride (GaN) based [...]
2012-08-30meta-author