4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at [email protected] and [email protected]
A comparative study of the bonding energy in adhesive wafer bonding Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 525+/-25um. Si, 150mm dia. SSP 525+/-25 thick N type Phos or antimony resistivity 0.01-0.2 ohm-cm. with 200A thermal OX and 1200A LPCVD nitride – stoichiometric For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 2″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots. More about the indium antimonide crystal substrate specifications, please see the following part: 1. Indium Antimonide [...]
The technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films was studied. Transmission electron microscopy images revealed no interface corresponding to the original films surfaces for bonded a–Ge–a–Ge films. Analyses of film structure and the [...]
PAM XIAMEN offers Zinc Oxide on Silicon. The following wafers work Thermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4″ Silicon wafer Dry Oxide layer thickness: 100 nm ( 2000A) +/-10% Growth method – Dry oxidizing at 1000oC Refractive index – 1.455 Note: customized oxide layer [...]
Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had [...]
