Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3 6″ FZ Si wafer, 75pcs Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Life time : > 1000 μs Thickness: 400 ± 25 μm Carbon (atm/cm3): <2.0 x 1016 Oxygen (atm/cm3): < 2 x 1016 Diameter: 150 mm Primary flat: Semi Std Secondary flat: not essential Front and back side Finish: [...]
PAM XIAMEN offers SrTiO3 single crystal. SrTiO3 (STO) single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality [...]
The GaAs substrate (gallium arsenide substrate) doped with silicon, grown by VGF, is available from GaAs substrate supplier – PAM XIAMEN, which is for fabricating LED (light-emitting diodes). GaAs is zinc blende crystal structure. The GaAs substrate orentation is (100)150± 0.50 off toward (111)A with [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches Published by: K. Haehre ; M. Meisser ; F. Denk ; [...]
Due to the wide band gap of SiC wafer, SiC does not absorb part or almost all of the visible light. The wavelength of the absorbed light depends on the band gap, the energy levels of the main impurities and the excited energy levels [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 330 P/E 3-7 SEMI Prime n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime n-type Si:P [111] 2″ 5000 P/E 2.0-3.1 Prime, NO Flats, Individual cst n-type Si:P [111] 2″ 5000 P/E 2-3 Prime, NO Flats, Individual cst n-type Si:P [111-8°] 2″ 280 P/E 1.3-1.8 SEMI Prime, n-type Si:P [111-3.5°] 2″ 280 P/E 1-30 SEMI Prime, n-type Si:P [111-2.5°] 2″ 500 C/C 1-20 SEMI Prime n-type Si:P [111] 2″ 7500 P/E 1-10 SEMI Prime, , Individual cst n-type Si:Sb [111-3°] 2″ 300 P/E ~0.02 SEMI Prime n-type Si:Sb [111-1° towards[112]] 2″ 500 P/E 0.017-0.026 SEMI Prime, n-type Si:Sb [111-2°] 2″ 200 P/E ~0.01 SEMI Prime, n-type Si:Sb [111] 2″ 280 P/E 0.01-0.02 SEMI Prime, n-type Si:Sb [111-2°] 2″ 280 P/E 0.008-0.020 SEMI Prime, n-type Si:As [111] 2″ 300 P/E 0.0030-0.0034 SEMI Prime, n-type Si:As [111] 2″ 300 P/E 0.001-0.005 SEMI Prime, n-type Si:As [111-4°] 2″ 350 P/E 0.001-0.005 SEMI [...]
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