Gartner: worldwide semiconductor revenue declined 2.3% in 2015 Worldwide semiconductor revenue totaled 334.8 billion dollar in 2015, a 2.3 percent decline from 2014, according to final results by Gartner. The combined revenue of the top 25 semiconductor vendors fell by 0.5 percent during 2015. This was [...]
2016-07-04meta-author
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness：229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 39-47Ωcm TTV ≤10μm RRG ≤ 7% about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to be [...]
2019-08-22meta-author
As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices [...]
2021-05-17meta-author
PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES. Nd:GGG (neodymium doped gadolinium gallium garnet) Chemical formula: Nd:Gd3Ga5O12 Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long [...]
2019-03-12meta-author
A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
2020-02-18meta-author
We offer GaAs Epitaxial Wafers for Schottky Diode as follows: 1. GaAs Schottky Diode Epi Structures No.1 GaAs Schottky Diode Epiwafer Epitaxial Structure PAM210319 No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C Tol. Dopant Carrrier Type 4 GaAs 1.00 ±10% ＞5.0E18 N/A Si N++ 3 GaAs 0.28 ±10% 2.0E17 ±10% Si N 2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — — 1 GaAs 0.05 ±10% — N/A — — Substrate: 2”,3”,4″ No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode PAM210326 -SDE No. Material Thickness Doping Doping Concentration 3 GaAs schottky contact layer – n – 2 GaAs ohmic contact layer – – 5×10^18 cm-3 1 Low temperature GaAs 2um – – 0 Semi-insulating GaAs (100) [...]
