6″FZ Prime Silicon Wafer-3

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3

6″ FZ Si wafer, 75pcs
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Life time : > 1000 μs
Thickness: 400 ± 25 μm
Carbon (atm/cm3): <2.0 x 1016
Oxygen (atm/cm3): < 2 x 1016
Diameter: 150 mm
Primary flat: Semi Std
Secondary flat: not essential
Front and back side Finish: As cut
TTV ™: ≤ 12
Bow(tm): < 40
Warp ™: < 50
Surface appearance : Clean and stain/saw free

For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-04-23

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PAM XIAMEN offers 50.8mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2179 p-type Si:B [100] 2″ 300 P/E 1–10 SEMI Prime, 2Flats, hard cst PAM2180 p-type Si:Ga [100] 2″ 350 P/P 1–5 SEMI Prime, 2Flats, hard cst PAM2181 p-type Si:B [100] 2″ 500 P/E 1–2 SEMI Prime, 2Flats, hard cst PAM2182 p-type Si:B [100] 2″ 900 P/E/P 1–10 SEMI Prime, 2Flats, hard cst PAM2183 p-type Si:B [100] 2″ 2000 P/P 1–10 SEMI Prime, 2Flats, Individual cst PAM2184 p-type Si:B [100] 2″ 2000 P/E 1–10 SEMI Prime, [...]

2019-02-18meta-author

100mm (4 Inch) Silicon Wafers-4

PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2485 p–type Si:B [100] 4″ 3000 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers PAM2486 p–type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst PAM2487 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm PAM2488 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, [...]

2019-02-19meta-author

3″ Silicon Wafer-13

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [111-2.5°] 3″ 300 P/E 0.014-0.018 SEMI Prime n-type Si:Sb [111-3.5°] 3″ 380 P/E 0.014-0.016 SEMI Prime n-type Si:Sb [111-3°] 3″ 300 P/E 0.011-0.016 SEMI Prime n-type Si:Sb [111] ±0.5° 3″ 300 P/P 0.01-0.20 SEMI Prime n-type Si:Sb [111] 3″ 380 P/E 0.008-0.025 SEMI Prime n-type Si:As [111-0.5°] 3″ 380 P/P 0.003-0.005 SEMI Prime n-type Si:As [111] 3″ 380 P/E/P 0.002-0.005 SEMI Prime n-type Si:As [111-2.5°] 3″ 380 P/E 0.002-0.005 SEMI Prime n-type Si:As [111-4°] 3″ 380 P/E 0.002-0.005 SEMI Prime For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]

2019-03-06meta-author

PAM XIAMEN Offers GaAsP wafer,size from 2”to 3”

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAsP materials and other related products and services announced the new availability of 2″-3” size is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.Dr. Shaka, said, “We are pleased to offer GaAsP wafers to our [...]

2017-06-15meta-author

4″CZ Prime Silicon Wafer-7

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7 GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-03-25meta-author

INDIUM ARSENIDE (INAS) SINGLE CRYSTAL

Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]

2019-03-12meta-author

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sales@powerwaywafer.com tech@powerwaywafer.com

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6″FZ Prime Silicon Wafer-3

6″FZ Prime Silicon Wafer-3

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