PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 700±25μm.
Thickness 700±25μm
Si, 150mm dia. SSP
N type Phos or antimony
resistivity 0.01-0.2 ohm-cm
with 200A thermal OX and
1200A LPCVD nitride – stoichiometric
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-01meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
Nichia Develops Higher Power Green Laser Diodes
CompoundSemi News Staff
November 23, 2012…Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied [...]
2013-02-28meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-25meta-author
Soraa, the world’s leading developer of GaN on GaN （ gallium nitride on gallium nitride ） – solid state lighting technology, announced the launch of its flagship product, the Soraa LED MR16 lamp. The new product is the first LED lamp to provide superior performance to [...]
2012-05-21meta-author
New graphene fabrication method uses silicon carbide template
Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far.
(PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
2018-05-17meta-author
