Highlights •Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described. •Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained. •Interconnects with excellent performance up to 220 GHz demonstrated. •Palladium barrier necessary when combining Al-based technology with gold based one. Abstract In order to benefit from the material [...]
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]
PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm) FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm) FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]
2019-03-08meta-author
PAM-XIAMEN can supply AlN on Sapphire wafers, more specifications you can find in: https://www.powerwaywafer.com/aln-single-crystal-substrate-template-4.html At present, metal organic chemical vapor deposition (MOCVD) is considered one of the most widely used epitaxial techniques for AlN, but it always faces problems such as long growth cycles, high [...]
2024-03-22meta-author
PAM XIAMEN offers 1″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 1″ 475 ±10 E/E FZ >500 {1,900-2,400} n-type Si:P [111] ±0.5° 1″ 280 P/P FZ 2,000-10,000 TTV<5μm Intrinsic Si:- [100] 1″ 320 P/E FZ >20,000 Prime Intrinsic Si:- [100] 1″ 500 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 1″ 160 P/P FZ >10,000 Prime, TTV<8μm Intrinsic Si:- [100] 0.5″ 12700 C/C FZ >10,000 a set of 4 rods sealed in polyehtylene foil Intrinsic Si:- [111] ±0.5° 1″ 500 P/P FZ >15,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 1″ 1000 P/E FZ 14,000-30,000 Cassettes of 7, 6, 6 wafers Intrinsic Si:- [111] ±2° 1″ 27870 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm p-type [...]
2019-03-08meta-author
Colleges and universities are not only the gathering place of innovative talents, but also the source of innovation achievements. PAM-XIAMEN has collected the research and development (R&D) expenditure rankings of U.S. higher education institutions in 2019~2020. As a leading manufacturer of semiconductor materials, PAM-XIAMEN is [...]
2022-08-31meta-author