PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters.
These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering.
[...]
2018-11-01meta-author
The Silicon on Lattice Engineered Substrate (SOLES) platform enables monolithic integration of III-V compound semiconductor (III-V) and silicon (Si) complementary metal oxide semiconductor (CMOS) devices. The SOLES wafer provides a device quality Si-on-Insulator (SOI) layer for CMOS device fabrication and an embedded III-V device [...]
2020-01-13meta-author
PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.
Main Parameters
Crystal structure
face centered cubic, M3 a = 6.291 Å
Growth method
crystallization process
Density
1.98(g/cm3)
Melting point
770 °C
Refractive index
1.49025 (at 589 nm)
T
0.91
Nf
0.01114
Surface roughness
<10 nm due to hygroscopic [...]
2019-03-12meta-author
PAM XIAMEN offers D263 Glass Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Our clients use our Schott D263 glass for the following applications:
Touch Panel Controls
Liquid Crystal Displays (LCD)
Electroluminescent Displays
Solar Cell Protective Glass
Diam
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Grade
50.8mm
550um
DSP
76.2mm
550um
DSP
100mm
500um
DSP
150mm
550um
DSP
200mm
500um
DSP
300mm
500um
DSP
For more information, please visit our [...]
2019-02-27meta-author
High quality large-area single crystal copper substrate is an effective method for preparing high-quality large-area single crystal graphene. There are several main methods for preparing single crystal copper: 1) Commercial single crystal copper is mostly produced by using the high-temperature hot casting mode continuous [...]
2024-03-12meta-author
We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) and Ge (100) wafers were amorphized and an a/c interface was developed by pre-irradiation with a 50 keV Ar+ beam at normal incidence with an [...]
2019-07-08meta-author