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Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title: Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions [...]
What is Ion Implantation Process of Silicon Wafer?
Semiconductor doping is a key process step in the production of integrated circuits. In the semiconductor production process, crystalline silicon is used as the substrate material of the wafer, and its electrical conductivity is very poor. Silicon becomes a useful semiconductor only when small [...]
200mm (8 Inch) Silicon Wafers
PAM XIAMEN offers 200mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Below are just some of our recent 200mm silicon wafer sale specials. 8″ silicon wafer Dia.: 200+/-0.5mm Type: P Ori.: <100> Res.: 1000-3000 ohm.cm Thk.: 705-745um V-notch Surface: Polished/Etched MFG: MEMC 200mm Silicon from PAM XIAMEN 200mm N/Ph [...]
Coulometric determination of arsenic in gallium arsenide crystal wafers
Coulometric determination of arsenic in gallium arsenide crystal wafers The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated [...]
2″ Silicon Wafer-2
PAM XIAMEN offers 2″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 50.8 N Phos CZ -100 1-20 4900-5100 P/E PRIME 50.8 N Phos CZ -100 1-50 5900-6100 P/E PRIME 50.8 N Phos CZ -100 9900-10100 P/E PRIME 50.8 N Phos FZ -111 2k-5k 2000-5000 P/E PRIME 50.8 N Phos CZ -111 225-275 P/P PRIME 50.8 N Phos CZ -111 250-300 P/E PRIME 50.8 N Phos FZ -111 2000-5000 275-325 P/E PRIME 50.8 N Phos CZ -111 2900-3100 P/E PRIME 50.8 N Phos CZ -111 1-20 5900-6100 P/E PRIME 50.8 N Phos CZ -111 1-20 5950-6050 P/E PRIME 50.8 N Phos FZ -111 150-200 9900-10100 P/E PRIME 50.8 N Phos CZ -111 1-20 11900-12100 P/E PRIME 50.8 N Phos CZ -110 225-275 P/P PRIME 50.8 N Phos CZ -110 250-300 P/E PRIME 50.8 P Boron CZ (111) Off 4″ Towards (110) .005-.02 275-325 P/E PRIME 50.8 P Boron CZ (111) Off 4″ Towards (110) .001-.005 300-350 P/E PRIME 50.8 P Any CZ Any Any 2400-2600 P/E TEST 50.8 P Any CZ Any Any 4900-5100 P/E TEST 50.8 P Boron CZ -100 1-20 10-30 P/P PRIME 50.8 P Boron CZ -100 1-20 40-60 P/P PRIME 50.8 P Boron CZ -100 1-20 80-100 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
3″ Silicon EPI Wafer-2
PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 4±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 20±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 30 n- Si:P 4.5±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 9.5±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 12±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 11±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 36 n- Si:P 4±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 41 n- Si:P 25±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 42 n- Si:P 20.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 42.5 n- Si:P 17±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 52.5 n- Si:P 12.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 56 n- Si:P 12±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 70 n- Si:P 73±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 72 n- Si:P 12.5±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 73 n- Si:P 84±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 13±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 11±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 12±10% n/n+ 3″Øx375μm n- Si:As[111] 0.001-0.005 P/E 85 n- [...]