2″ Silicon Wafer-2

PAM XIAMEN offers 2″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
50.8 N Phos CZ -100 1-20 4900-5100 P/E PRIME
50.8 N Phos CZ -100 1-50 5900-6100 P/E PRIME
50.8 N Phos CZ -100 9900-10100 P/E PRIME
50.8 N Phos FZ -111 2k-5k 2000-5000 P/E PRIME
50.8 N Phos CZ -111 225-275 P/P PRIME
50.8 N Phos CZ -111 250-300 P/E PRIME
50.8 N Phos FZ -111 2000-5000 275-325 P/E PRIME
50.8 N Phos CZ -111 2900-3100 P/E PRIME
50.8 N Phos CZ -111 1-20 5900-6100 P/E PRIME
50.8 N Phos CZ -111 1-20 5950-6050 P/E PRIME
50.8 N Phos FZ -111 150-200 9900-10100 P/E PRIME
50.8 N Phos CZ -111 1-20 11900-12100 P/E PRIME
50.8 N Phos CZ -110 225-275 P/P PRIME
50.8 N Phos CZ -110 250-300 P/E PRIME
50.8 P Boron CZ (111) Off 4″ Towards (110) .005-.02 275-325 P/E PRIME
50.8 P Boron CZ (111) Off 4″ Towards (110) .001-.005 300-350 P/E PRIME
50.8 P Any CZ Any Any 2400-2600 P/E TEST
50.8 P Any CZ Any Any 4900-5100 P/E TEST
50.8 P Boron CZ -100 1-20 10-30 P/P PRIME
50.8 P Boron CZ -100 1-20 40-60 P/P PRIME
50.8 P Boron CZ -100 1-20 80-100 P/P PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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